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Machine translation
1. (WO2007002427) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT USING RAISED SOURCE DRAIN AND REPLACEMENT METAL GATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/002427    International Application No.:    PCT/US2006/024517
Publication Date: 04.01.2007 International Filing Date: 21.06.2006
IPC:
H01L 21/336 (2006.01), H01L 21/28 (2006.01), H01L 29/78 (2006.01), H01L 29/49 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, California 95052 (US) (For All Designated States Except US).
KAVALIEROS, Jack [US/US]; (US) (For US Only).
CAPPELLANI, Annalisa [IT/US]; (US) (For US Only).
BRASK, Justin [US/US]; (US) (For US Only).
DATTA, Suman [IN/US]; (US) (For US Only).
DOCZY, Mark [US/US]; (US) (For US Only).
METZ, Matthew [US/US]; (US) (For US Only).
BARNS, Chris [US/US]; (US) (For US Only).
CHAU, Robert [US/US]; (US) (For US Only)
Inventors: KAVALIEROS, Jack; (US).
CAPPELLANI, Annalisa; (US).
BRASK, Justin; (US).
DATTA, Suman; (US).
DOCZY, Mark; (US).
METZ, Matthew; (US).
BARNS, Chris; (US).
CHAU, Robert; (US)
Agent: TROP, Timothy, N.; TROP, PRUNER & HU, P.C., 1616 S. Voss Rd., Ste. 750, Houston, Texas 77057-2631 (US)
Priority Data:
11/159,430 21.06.2005 US
Title (EN) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT USING RAISED SOURCE DRAIN AND REPLACEMENT METAL GATE
(FR) CIRCUIT INTEGRE A SEMI-CONDUCTEUR COMPLEMENTAIRE A L'OXYDE DE METAL DANS LEQUEL SONT UTILISES UN DRAIN ET UNE SOURCE SURELEVES ET UNE GRILLE METALLIQUE DE REMPLACEMENT
Abstract: front page image
(EN)A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the removal of a nitride etch stop layer.
(FR)L'invention concerne un circuit intégré à semi-conducteur complémentaire à l'oxyde de métal pouvant comprendre un dispositif PMOS comportant une grille métallique de remplacement et un drain et une source surélevés. Le drain et la source surélevés peuvent être obtenus par dépôt épitaxique de germanium-silicium dopé de type p. Le traitement de la grille métallique de remplacement permet d'obtenir une électrode de grille métallique et peut comprendre l'enlèvement d'une couche d'arrêt de gravure de nitrure.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)