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Machine translation
1. (WO2007002370) MEDIA FOR WRITING HIGHLY RESOLVED DOMAINS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/002370    International Application No.:    PCT/US2006/024436
Publication Date: 04.01.2007 International Filing Date: 23.06.2006
IPC:
G11B 7/00 (2006.01), G11B 9/00 (2006.01)
Applicants: NANOCHIP, INC. [US/US]; 48041 Fremont Boulevard, Fremont, California 94538 (US) (For All Designated States Except US).
ANOIKIN, Yevgeny, Vasilievich [US/US]; (US) (For US Only).
ADAMS, Donald, Edward [US/US]; (US) (For US Only).
FAN, Zhaohui [CN/US]; (US) (For US Only)
Inventors: ANOIKIN, Yevgeny, Vasilievich; (US).
ADAMS, Donald, Edward; (US).
FAN, Zhaohui; (US)
Agent: MEYER, Sheldon, R.; Fliesler Meyer LLP, 650 California Street, Fourteenth Floor, San Francisco, CA 94108 (US)
Priority Data:
60/693,950 24.06.2005 US
11/177,550 08.07.2005 US
Title (EN) MEDIA FOR WRITING HIGHLY RESOLVED DOMAINS
(FR) SUPPORT D’ÉCRITURE À DOMAINES HAUTE RÉSOLUTION
Abstract: front page image
(EN)Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
(FR)La présente invention concerne des systèmes pouvant comprendre une tête qui entre en contact avec un support, celui-ci contenant un matériau à changement de phase dans un mode de réalisation (ou un matériau de mémoire sensible à la polarité ou un autre type de matériau de mémoire dans d’autres modes de réalisation) disposé entre un substrat et une couche de finition. La couche de finition est un film codéposé doté d’une partie conductrice et d’une partie sensiblement non conductrice, ledit film conduisant mieux le courant à travers la couche qu’à ses bornes. La couche de finition oriente sensiblement le courant de sorte qu’une section du matériau à changement de phase se trouvant directement sous la tête soit chauffée à une température suffisante pour provoquer un désordre de la structure du matériau. Le courant est ensuite coupé, puis le matériau à changement de phase est rapidement refroidi pour former un domaine doté d’une résistivité supérieure à celle de la structure de masse cristalline.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)