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1. (WO2007002040) METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/002040 International Application No.: PCT/US2006/023915
Publication Date: 04.01.2007 International Filing Date: 20.06.2006
IPC:
H01L 21/318 (2006.01) ,H01L 21/469 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
461
to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
469
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
Applicants:
APPLIED MATERIALS, INC.; 3050 Bowers Avenue Santa Clara, California 95054, US (AllExceptUS)
SINGH, Kaushal K [US/US]; US (UsOnly)
RANISH, Joseph M [US/US]; US (UsOnly)
SEUTTER, Sean M [US/US]; US (UsOnly)
Inventors:
SINGH, Kaushal K; US
RANISH, Joseph M; US
SEUTTER, Sean M; US
Agent:
PATTERSON, B Todd ; PATTERSON & SHERIDAN LLP 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056, US
Priority Data:
11/157,56721.06.2005US
Title (EN) METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS
(FR) PROCEDE DE FABRICATION DE MATERIAUX CONTENANT DU SILICIUM AU COURS D'UN PROCESSUS DE DEPOT PAR PHOTOEXCITATION
Abstract:
(EN) Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
(FR) L'invention concerne, généralement, un procédé de dépôt de films à l'aide d'une source d'ultraviolets au cours d'un processus de photoexcitation. Les films sont déposés sur un substrat et contiennent un matériau tel que le silicium (par exemple, par croissance épitaxique, cristalline, microcristalline, polysilicium ou amorphe), silice, nitrure de silicium, oxynitrure de silicium ou autres matériaux contenant du silicium. Le processus de photoexcitation permet d'exposer le substrat et/ou des gaz à un faisceau ou flux énergétique avant, pendant ou après le processus de dépôt. En conséquence, le processus de photoexcitation peut être utilisé pour effectuer le prétraitement ou le post-traitement du substrat ou du matériau, déposer le matériau contenant le silicium et améliorer les processus de nettoyage de la chambre. Les améliorations apportées par ce processus de photoexcitation aux ultraviolets sont l'élimination des oxydes natifs avant le dépôt, l'élimination des volatiles des films déposés, l'augmentation de l'énergie superficielle des films déposés, l'augmentation de l'énergie d'excitation des précurseurs, la réduction du temps de dépôt et la baisse de la température de dépôt.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080027859JP2009516906