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1. (WO2007002040) METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS

Pub. No.:    WO/2007/002040    International Application No.:    PCT/US2006/023915
Publication Date: Jan 4, 2007 International Filing Date: Jun 20, 2006
IPC: H01L 21/318
H01L 21/469
Applicants: APPLIED MATERIALS, INC.
SINGH, Kaushal K
RANISH, Joseph M
SEUTTER, Sean M
Inventors: SINGH, Kaushal K
RANISH, Joseph M
SEUTTER, Sean M
Title: METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS
Abstract:
Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.