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1. (WO2007001995) DIELECTRIC SUBSTRATE WITH HOLES AND METHOD OF MANUFACTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001995 International Application No.: PCT/US2006/023832
Publication Date: 04.01.2007 International Filing Date: 20.06.2006
IPC:
H05K 1/00 (2006.01) ,H05K 3/00 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
Applicants:
3M INNOVATIVE PROPERTIES COMPANY [US/US]; 3M Center Post Office Box 33427 Saint Paul, Minnesota 55133-3427, US (AllExceptUS)
LEE, Vincent Yong Chin [SG/SG]; SG (UsOnly)
FU, Yi Liang [SG/SG]; SG (UsOnly)
KOYANAGI, Tatsunori [JP/JP]; JP (UsOnly)
OHKURA, Yoshiyuki [JP/JP]; JP (UsOnly)
ITO, Masahiko [JP/JP]; JP (UsOnly)
Inventors:
LEE, Vincent Yong Chin; SG
FU, Yi Liang; SG
KOYANAGI, Tatsunori; JP
OHKURA, Yoshiyuki; JP
ITO, Masahiko; JP
Agent:
GOVER, Melanie G., ; 3M Center Office of Intellectual Property Counsel Post Office Box 33427 Saint Paul, Minnesota 55133-3427, US
Priority Data:
200504031-622.06.2005SG
Title (EN) DIELECTRIC SUBSTRATE WITH HOLES AND METHOD OF MANUFACTURE
(FR) SUBSTRAT DIELECTRIQUE POURVU D'ORIFICES ET PROCEDE DE FABRICATION ASSOCIE
Abstract:
(EN) An aspect of the present invention comprises a method of forming holes in a dielectric substrate comprising the steps of applying a layer of photoresist to a dielectric substrate, exposing portions of the photoresist to actinic radiation through a photomask to form a pattern in the photoresist for an array of holes to be etched in the substrate, developing the photoresist, etching the dielectric substrate to form an array of holes, each hole extending at least partially through the dielectric substrate, and removing the excess photoresist. Another aspect of the present invention is a method of simultaneously forming holes in a dielectric substrate some of which extend partially through the substrate and some of which extend completely through the substrate. Other aspects of the present invention are dielectric substrates formed using the methods of the invention.
(FR) Un aspect de l'invention concerne un procédé de formation d'orifices dans un substrat diélectrique qui comprend les étapes consistant : à appliquer une couche de photorésine sur un substrat diélectrique ; à exposer des parties de la photorésine à un rayonnement actinique à travers un masque photographique afin que soit formé un motif dans la photorésine pour graver un réseau d'orifices dans le substrat ; à développer la photorésine ; à graver le substrat diélectrique afin que soit formé un réseau d'orifices, chaque orifice s'étendant au moins partiellement à travers ledit substrat diélectrique ; et à éliminer l'excédent de photorésine. Un autre aspect de l'invention concerne un procédé permettant de former simultanément des orifices dans un substrat diélectrique, certains s'étendant partiellement à travers le substrat et d'autres s'étendant entièrement à travers le substrat. D'autres aspects de l'invention concernent des substrats diélectriques formés selon les procédés de l'invention.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080017381EP1894451JP2008544550US20100051324CN101248708CA2613282