Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2007001856) SUBSTRATE CONTACT FOR A CAPPED MEMS AND METHOD OF MAKING THE SUBSTRATE CONTACT AT THE WAFER LEVEL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001856 International Application No.: PCT/US2006/023122
Publication Date: 04.01.2007 International Filing Date: 13.06.2006
IPC:
H01L 21/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applicants:
FREESCALE SEMICONDUCTOR, INC. [US/US]; 6501 William Cannon Drive West Law Department Austin, Texas 78735, US (AllExceptUS)
HOOPER, Stephen R. [US/US]; US (UsOnly)
DESAI, Hemant D. [US/US]; US (UsOnly)
MCDONALD, William G. [US/US]; US (UsOnly)
SALIAN, Arvind S. [US/US]; US (UsOnly)
Inventors:
HOOPER, Stephen R.; US
DESAI, Hemant D.; US
MCDONALD, William G.; US
SALIAN, Arvind S.; US
Agent:
KING, Robert L. ; 7700 West Parmer Lane Md: Tx32/pl02 Austin, Texas 78729, US
Priority Data:
11/158,79321.06.2005US
Title (EN) SUBSTRATE CONTACT FOR A CAPPED MEMS AND METHOD OF MAKING THE SUBSTRATE CONTACT AT THE WAFER LEVEL
(FR) CONTACT DE SUBSTRAT POUR DISPOSITIF MEMS COIFFE ET PROCEDE DE FABRICATION DU CONTACT DE SUBSTRAT AU NIVEAU TRANCHE
Abstract:
(EN) A MEMS device (100) is provided that includes a handle layer (108) having a sidewall (138), a cap (132) overlying said handle layer (108), said cap (132) having a sidewall (138), and a conductive material (136) disposed on at least a portion of said sidewall of said cap (138) and said sidewall of said handle layer (138) to thereby electrically couple said handle layer (108) to said cap (132). A wafer-level method for manufacturing the MEMS device from a substrate (300) comprising a handle layer (108) and a cap (132) overlying the handle layer (108) is also provided. The method includes making a first cut through the cap (132) and at least a portion of the substrate (300) to form a first sidewall (138), and depositing a conductive material (136) onto the first sidewall (138) to electrically couple the cap (132) to the substrate (300).
(FR) L'invention concerne un dispositif MEMS (100) qui comprend une couche (108) de manipulation comportant une paroi latérale (138); une coiffe (132) recouvrant la couche (108) de manipulation, ladite coiffe (132) comportant une paroi latérale (138); et une matière conductrice (136), placée sur au moins une partie de la paroi latérale de la coiffe (138) et de la paroi latérale de la couche (138) de manipulation pour coupler électriquement la couche (108) de manipulation et la coiffe (132). L'invention concerne aussi un procédé de fabrication au niveau tranche du dispositif MEMS à partir d'un substrat (300), qui comprend une couche (108) de manipulation et une coiffe (132) recouvrant la couche (108) manipulation. Le procédé comporte les étapes consistant à: faire une première entaille à travers la coiffe (132) et au moins une partie du substrat (300) pour former une première paroi latérale (138), et déposer une matière conductrice (136) sur la première paroi latérale (138) afin de coupler électriquement la coiffe (132) et le substrat (300).
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1897122JP2008546553