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1. (WO2007001832) PLASMA TREATMENT OF DIELECTRIC MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001832 International Application No.: PCT/US2006/022997
Publication Date: 04.01.2007 International Filing Date: 13.06.2006
IPC:
C23C 16/56 (2006.01) ,C23C 16/40 (2006.01) ,H01L 21/314 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
56
After-treatment
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054, US (AllExceptUS)
MUTHUKRISHNAN, Shankar [US/US]; US (UsOnly)
SHARANGPANI, Rahul [IN/US]; US (UsOnly)
GOYANI, Tejal [IN/US]; US (UsOnly)
NARWANKAR, Pravin, K. [IN/US]; US (UsOnly)
KHER, Shreyas, S. [US/US]; US (UsOnly)
AHMED, Khaled, Z. [EG/US]; US (UsOnly)
MA, Yi [US/US]; US (UsOnly)
Inventors:
MUTHUKRISHNAN, Shankar; US
SHARANGPANI, Rahul; US
GOYANI, Tejal; US
NARWANKAR, Pravin, K.; US
KHER, Shreyas, S.; US
AHMED, Khaled, Z.; US
MA, Yi; US
Agent:
PATTERSON, Todd, B. ; Patterson & Sheridan, L.L.P. 3040 Post Oak Blvd., Suite 1500 Houston, TX 77056-6582, US
Priority Data:
11/167,07024.06.2005US
Title (EN) PLASMA TREATMENT OF DIELECTRIC MATERIAL
(FR) TRAITEMENT AU PLASMA D'UN MATERIAU DIELECTRIQUE
Abstract:
(EN) In one embodiment, a method for forming a dielectric material is provided which includes exposing a substrate sequentially to a metal-containing precursor and an oxidizing gas while forming metal oxide during an atomic layer deposition (ALD) process and subsequently exposing the substrate to an inert plasma process and a thermal annealing process. Generally, the metal oxide contains hafnium, tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof. In one example, the substrate is exposed to an inert plasma gas that is free or substantially free of nitrogen. Subsequently, the substrate is exposed to an environment of oxygen during a thermal annealing process. In another example, a metal oxide material is formed during an ALD process by exposing the substrate sequentially to a metal precursor and an oxidizing gas containing water vapor. The water vapor may be formed from a catalytic water vapor generator consuming a hydrogen source and an oxygen source.
(FR) Dans un mode de réalisation, l'invention concerne un procédé permettant de former un matériau diélectrique qui consiste: à exposer séquentiellement un substrat à un précurseur contenant un métal et à un gaz d'oxydation tout en formant un oxyde métallique pendant un processus de dépôt de couche atomique (ALD); puis à exposer ce substrat à un processus plasma inerte et à un processus de recuit thermique. En général, l'oxyde métallique contient un hafnium, un tantalum, un titanium, un aluminium, un zirconium, un lanthanum ou des combinaisons de ceux-ci. Dans un premier exemple, le substrat est exposé à un gaz plasma inerte qui est exempt ou sensiblement exempt d'azote. Puis, ledit substrat est exposé à un environnement d'oxygène pendant un processus de recuit thermique. Dans un second exemple, un matériau d'oxyde métallique est formé pendant un processus ALD par exposition séquentielle du substrat à un précurseur métallique et à de la vapeur d'eau contenant un gaz d'oxydation. La vapeur d'eau se forme à partir d'un générateur catalytique de vapeur d'eau utilisant une source d'hydrogène et une source d'oxygène.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080011236JP2008544091CN101248212