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1. (WO2007001825) SEMICONDUCTOR DEVICE WITH A CONDUCTION ENHANCEMENT LAYER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001825 International Application No.: PCT/US2006/022922
Publication Date: 04.01.2007 International Filing Date: 12.06.2006
IPC:
H01L 29/772 (2006.01) ,H01L 29/808 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
808
with a PN junction gate
Applicants:
TELEDYNE LICENSING, LLC [US/US]; 1049 Camino Dos Rios P.O. Box 1085 Mail Code A15 Thousand Oaks, CA 914358-0085, US (AllExceptUS)
ZHANG, Qingchun; US (UsOnly)
Inventors:
ZHANG, Qingchun; US
Agent:
PATRICK, Steven, C. ; Koppel, Patrick & Heybl 555 St. Charles Drive, Suite 107 Thousand Oaks, CA 91360, US
Priority Data:
11/157,22920.06.2005US
Title (EN) SEMICONDUCTOR DEVICE WITH A CONDUCTION ENHANCEMENT LAYER
(FR) DISPOSITIF SEMI-CONDUCTEUR COMPORTANT UNE COUCHE RENFORÇANT LA CONDUCTION
Abstract:
(EN) A semiconductor device includes a drift layer of a first conductivity type having a doping concentration and a conduction layer also of the first conductivity type on the drift layer that has a doping concentration greater than the doping concentration of the drift layer. The device also includes a pair of trench structures, each including a trench contact at one end and a region of a second conductivity type opposite the first conductivity type, at another end. Each trench structure extends into and terminates within the conduction layer such that the second-conductivity-type region is within the conduction layer. A first contact structure is on the drift layer opposite the conduction layer while a second contact structure is on the conduction layer.
(FR) L'invention concerne un dispositif semi-conducteur qui comprend une couche de migration présentant un premier type de conductivité et une concentration de dopage; et une couche de conduction, placée sur la couche de migration et qui présente aussi le premier type de conductivité, mais dont la concentration de dopage est supérieure à celle de la couche de migration. Le dispositif comprend aussi deux structures de tranchée comportant chacune un contact de tranchée à une extrémité, et, à l'autre extrémité, une région d'un deuxième type de conductivité, opposé au premier type de conductivité. Chaque structure de tranchée se déploie et aboutit dans la couche de conduction, de sorte que la région du deuxième type de conductivité se situe dans la couche de conduction. Une première structure de contact se situe sur la couche de migration opposée à la couche de conduction, et une deuxième structure de contact se situe sur la couche de conduction.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)