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1. (WO2007001712) ION IMPLANTING METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001712 International Application No.: PCT/US2006/020600
Publication Date: 04.01.2007 International Filing Date: 25.05.2006
Chapter 2 Demand Filed: 23.01.2007
IPC:
H01L 21/266 (2006.01) ,H01L 21/265 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
266
using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Boise, ID 83716, US
Inventors:
CULVER, Randall; US
MCDANIEL, Terrence, B.; US
WANG, Hongmei; US
DALE, James, L.; US
LANE, Richard, H.; US
FISHBURN, Fred, D.; US
Agent:
MATKIN, Mark, S.; WELLS ST. JOHN P.S. 601 West First Avenue Suite 1300 Spokane, WA 99201-3828, US
Priority Data:
11/168,89328.06.2005US
Title (EN) ION IMPLANTING METHODS
(FR) PROCÉDÉS D'IMPLANTATION D'IONS
Abstract:
(EN) An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally pulled away from one another with a patterned photoresist layer received over the features and which has an opening therein received intermediate the pair of spaced features. While such spaced features are laterally pulled, a species is ion implanted into substrate material which is received lower than the pair of spaced features. After the ion implanting, the patterned photoresist layer is removed from the substrate. Other aspects and implementations are contemplated.
(FR) La présente invention concerne un procédé d'implantation d'ions comprenant la formation d'une paire de dispositifs espacés et adjacents se projetant vers l'extérieur à partir d'un substrat. Au moins les portions les plus extérieures de la paire de dispositifs espacés sont latéralement écartées l'une de l'autre avec une couche photorésistante à motif placée au-dessus des dispositifs et qui comporte une ouverture permettant de placer la paire de dispositifs espacés. Tandis que de tels dispositifs sont latéralement écartés, une espèce est implantée d'ions dans le matériau du substrat qui est situé plus bas que la paire de dispositifs espacés. Après l'implantation d'ions, la couche photorésistante à motif est retirée du substrat. La présente invention concerne également d'autres aspects et implémentations.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020080016738EP1897124JP2009510715CN101208777