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Machine translation
1. (WO2007001642) NON-VOLATILE SHADOW LATCH USING A NANOTUBE SWITCH
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/001642    International Application No.:    PCT/US2006/017853
Publication Date: 04.01.2007 International Filing Date: 09.05.2006
Chapter 2 Demand Filed:    01.12.2006    
IPC:
G11C 14/00 (2006.01)
Applicants: NANTERO, INC. [US/US]; 25-D Olympia Avenue, Woburn, MA 01801 (US) (For All Designated States Except US).
BERTIN, Claude, L. [US/US]; (US) (For US Only).
GUO, Frank [US/US]; (US) (For US Only).
RUECKES, Thomas [US/US]; (US) (For US Only).
KONSEK, Steven, L. [US/US]; (US) (For US Only).
MEINHOLD, Mitchell [US/US]; (US) (For US Only).
STRASBURG, Max [US/US]; (US) (For US Only).
SIVARAJAN, Ramesh [IN/US]; (US) (For US Only).
HUANG, X. M. Henry [CN/US]; (US) (For US Only)
Inventors: BERTIN, Claude, L.; (US).
GUO, Frank; (US).
RUECKES, Thomas; (US).
KONSEK, Steven, L.; (US).
MEINHOLD, Mitchell; (US).
STRASBURG, Max; (US).
SIVARAJAN, Ramesh; (US).
HUANG, X. M. Henry; (US)
Agent: DICHIARA, Peter, M.; WILMER CUTLER PICKERING HALE AND DORR LLP, 60 State Street, Boston, MA 02109 (US)
Priority Data:
60/679,029 09.05.2005 US
60/692,765 22.06.2005 US
60/692,918 22.06.2005 US
60/692,891 22.06.2005 US
11/280,599 15.11.2005 US
Title (EN) NON-VOLATILE SHADOW LATCH USING A NANOTUBE SWITCH
(FR) VERROU FANTOME NON VOLATIL UTILISANT UN COMMUTATEUR A NANOTUBES
Abstract: front page image
(EN)A non- volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non- volatile nanotube switch that stores the corresponding state of the shadow device.
(FR)Une cellule de mémoire non volatile inclut un dispositif de stockage volatil permettant de mémoriser un état logique correspondant en réponse à une stimulation électrique; ainsi qu'un dispositif de mémoire fantôme couplé au dispositif de stockage volatil. Ledit dispositif de mémoire fantôme reçoit et mémorise l'état logique correspondant en réponse à la stimulation électrique. Le dispositif de mémoire fantôme inclut un commutateur à nanotubes non volatil qui permet de mémoriser l'état correspondant du dispositif fantôme.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)