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1. (WO2007001589) SEMICONDUCTOR DEVICES HAVING VARYING ELECTRODE WIDTHS TO PROVIDE NON-UNIFORM GATE PITCHES AND RELATED METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001589 International Application No.: PCT/US2006/013305
Publication Date: 04.01.2007 International Filing Date: 10.04.2006
Chapter 2 Demand Filed: 20.04.2007
IPC:
H01L 29/417 (2006.01) ,H01L 29/423 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
Applicants:
CREE, INC. [US/US]; 4600 Silicon Drive Durham, North Carolina 27703, US (AllExceptUS)
SRIRAM, Saptharishi [US/US]; US (UsOnly)
Inventors:
SRIRAM, Saptharishi; US
Agent:
STANEK, Elizabeth, A.; MYERS BIGEL SIBLEY & SAJOVEC, P.A. P.O. Box 37428 Raleigh, North Carolina 27627, US
Priority Data:
11/157,35621.06.2005US
Title (EN) SEMICONDUCTOR DEVICES HAVING VARYING ELECTRODE WIDTHS TO PROVIDE NON-UNIFORM GATE PITCHES AND RELATED METHODS
(FR) DISPOSITIFS SEMI-CONDUCTEURS À LARGEURS D’ÉLECTRODES VARIABLES PRÉSENTANT DES PAS DE GÂCHETTE NON UNIFORMES ET PROCÉDÉS ASSOCIÉS
Abstract:
(EN) Semiconductor devices including a plurality of unit cells connected in parallel are provided. Each of the unit cells have a first electrode, a second electrode and a gate finger. One of the first electrodes at a center of the semiconductor device has a first width and one of the first electrodes at a periphery of the semiconductor device has a second width, smaller than the first width. The second electrodes have a substantially constant width such that a pitch between the gate fingers is non-uniform. Related methods are also provided.
(FR) La présente invention concerne des dispositifs semi-conducteurs comprenant une pluralité de cellules unitaires connectées en parallèle. Chacune des cellules unitaires comporte une première électrode, une seconde électrode et un doigt de gâchette. L’une des premières électrodes au centre du dispositif semi-conducteur présente une première largeur et l’une des premières électrodes à la périphérie du dispositif semi-conducteur présente une seconde largeur, inférieure à la première largeur. Les secondes électrodes présentent une largeur sensiblement constante de sorte que le pas entre les doigts de gâchette soit non uniforme. La présente invention concerne également des procédés associés.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1894250JP2008544548