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Machine translation
1. (WO2007001260) TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2007/001260    International Application No.:    PCT/US2005/021416
Publication Date: 04.01.2007 International Filing Date: 16.06.2005
IPC:
H01L 21/00 (2006.01), H01L 21/66 (2006.01), H01L 23/58 (2006.01), G11C 29/00 (2006.01)
Applicants: PDF SOLUTIONS, INC. [US/US]; 333 West San Carlos Street, Suite 700, San Jose, CA 95110 (US) (For All Designated States Except US).
STINE, Brian [US/US]; (US) (For US Only).
KITCH, Victor [RU/US]; (US) (For US Only).
ZWALD, Mark [US/US]; (US) (For US Only).
TONELLO, Stefano [IT/US]; (IT) (For US Only)
Inventors: STINE, Brian; (US).
KITCH, Victor; (US).
ZWALD, Mark; (US).
TONELLO, Stefano; (IT)
Agent: YIM, Peter, J.; Morrison & Foerster LLP, 425 Market Street, San Francisco, CA 94105-2482 (US)
Priority Data:
Title (EN) TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT
(FR) CELLULES DE TEST POUR L’AMÉLIORATION DU RENDEMENT DE SEMI-CONDUCTEURS
Abstract: front page image
(EN)A test cell (100) for localizing defects includes a first active region (110), a second active region (120) formed substantially parallel to the first active region, a third active region (130) formed substantially parallel to the first and second active regions, a fourth active region (115) formed between the first and second active regions, and a fifth active region (125) formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.
(FR)L’invention concerne une cellule de test (100) servant à localiser les défauts comprenant une première zone active (110), une deuxième zone active (120) placée sensiblement parallèlement à la première zone active, une troisième zone active (130) placée sensiblement parallèlement à la première et à la deuxième zones actives, une quatrième zone active (115) placée entre la première et la deuxième zones actives et une cinquième zone active (125) placée entre la deuxième et la troisième zones actives. Les quatrième et cinquième zones actives sont placées de façon adjacente aux extrémités opposées de la seconde zone active. Les quatrième et cinquième zones actives sont aussi placées sensiblement perpendiculairement à la deuxième zone active.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)