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1. (WO2007001099) LIGHT EMITTING DIODE OF A NANOROD ARRAY STRUCTURE HAVING A NITRIDE-BASED MULTI QUANTUM WELL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001099 International Application No.: PCT/KR2005/002004
Publication Date: 04.01.2007 International Filing Date: 27.06.2005
IPC:
H01L 33/06 (2010.01) ,H01L 33/12 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/42 (2010.01) ,H01L 33/50 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
42
Transparent materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
Applicants:
SEOUL OPTO DEVICE CO., LTD. [KR/KR]; 1-36 Block, 727-5, Wonsi-dong Danwon-gu Ansan, Gyeonggi-do 425-851, KR (AllExceptUS)
KIM, Hwa Mok [KR/KR]; KR (UsOnly)
Inventors:
KIM, Hwa Mok; KR
Agent:
LEE, Soo Wan ; 1901-ho, Keungil Tower 19F, 677-25 Yeoksam-dong Gangnam-gu Seoul 135-914, KR
Priority Data:
Title (EN) LIGHT EMITTING DIODE OF A NANOROD ARRAY STRUCTURE HAVING A NITRIDE-BASED MULTI QUANTUM WELL
(FR) DIODE ÉLECTROLUMINESCENTE D’UNE STRUCTURE À MATRICE DE NANOBARRES AYANT UN PUITS QUANTIQUE MULTIPLE À BASE DE NITRURE
Abstract:
(EN) The present invention relates to a GaN light emitting diode. The GaN LED according to the present invention uses a GaN nanorod in which a multi quantum well formed by alternately stacking a plurality of InGaN layers and a plurality of GaN barriers is inserted into a p-n junction interface of a p-n junction GaN nanorod so that an n-type GaN nanorod, the multi quantum well, and a p-type GaN nanorod are sequentially arranged in a longitudinal direction. By arranging such GaN nanorods in an array, it is possible to provide an LED with higher luminance and higher light-emission efficiency as compared with a conventional laminated-film type GaN LED. It is possible to implement multi-color light with high luminance at a chip level by adjusting the amount of In and/or the thickness of the InGaN layers.
(FR) La présente invention se réfère à une diode électroluminescente de GaN. La LED de GaN, selon la présente invention, utilise une nanobarre de GaN dans laquelle un puits quantique multiple formé en empilant par alternance une pluralité de couches de InGaN et une pluralité de barrières de GaN est inséré dans une interface de jonction p-n d’une nanobarre de GaN à jonction p-n de manière à ce qu’une nanobarre de GaN de type n, le puits quantique multiple et une nanobarre de GaN de type p soient disposés de manière séquentielle dans une direction longitudinale. En disposant de telles nanobarres de GaN en une matrice, il est possible de fournir une LED avec une luminance lumineuse plus élevée et un rendement d’émission lumineuse plus élevé par rapport à une LED de GaN de type à film laminé conventionnelle. Il est possible de mettre en pratique une lumière multicouleur avec une luminance lumineuse élevée au niveau d’une puce en ajustant le degré de ln et/ou l’épaisseur des couches de InGaN.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: Korean (KO)
Also published as:
KR1020080030042JP2008544567US20080191191