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1. (WO2007001098) NANOSTRUCTURE HAVING A NITRIDE-BASED QUANTUM WELL AND LIGHT EMITTING DIODE EMPLOYING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001098 International Application No.: PCT/KR2005/001996
Publication Date: 04.01.2007 International Filing Date: 25.06.2005
IPC:
H01L 33/06 (2010.01) ,H01L 33/12 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/50 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
Applicants:
SEOUL OPTO DEVICE CO., LTD. [KR/KR]; 1-36 Block, 727-5, Wonsi-dong Danwon-gu, Ansan-si Gyeonggi-do 425-851, KR (AllExceptUS)
KIM, Hwa Mok [KR/KR]; KR (UsOnly)
Inventors:
KIM, Hwa Mok; KR
Agent:
LEE, Soo Wan ; 1901-ho, Keungil Tower 19F, 677-25 Yeoksam-dong Gangnam-gu Seoul 135-914, KR
Priority Data:
Title (EN) NANOSTRUCTURE HAVING A NITRIDE-BASED QUANTUM WELL AND LIGHT EMITTING DIODE EMPLOYING THE SAME
(FR) NANOSTRUCTURE COMPRENANT UN PUITS QUANTIQUE À BASE DE NITRURE ET DIODE ÉLECTROLUMINESCENTE L'UTILISANT
Abstract:
(EN) Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (Alx Iny Ga1-x-y )N (where, 0<x<l, O≤y≤l and O≤x+y≤l) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode. Ac¬ cordingly, with the nano shells, it is possible to provide a light emitting diode capable of improving external quantum efficiency by preventing non-radiative recombination on a surface of the (Alx Iny Ga1-x-y)N quantum well.
(FR) La présente invention concerne une nanostructure comprenant un puits quantique en nitrure d'indium et de gallium ainsi qu'une diode électroluminescente l'utilisant. Ladite diode comprend un substrat, une électrode transparente et un réseau de nanostructures intercalées entre le substrat et l'électrode transparente. Chacune des nanostructures comprend une nanotige noyau et une nanoenveloppe entourant la nanotige noyau. La nanotige noyau est formée de manière sensiblement perpendiculaire au substrat et comprend une première nanotige d'un premier type de conductivité, un puits quantique en (Alx Iny Ga1-x-y )N (où 0 < x < l, O ≤ y ≤ l et O ≤ x + y ≤ l) et une seconde nanotige d'un second type de conductivité, qui sont jointes dans un sens longitudinal. La nanoenveloppe est formée d'un matériau avec une largeur de bande interdite supérieure à celle du puits quantique, et entoure au moins le puits quantique de la nanotige noyau. En même temps, les secondes nanotiges sont raccordées en commun à l'électrode transparente. En conséquence, avec les nanoenveloppes, il est possible de fournir une diode électroluminescente pouvant améliorer l'efficacité quantique externe en empêchant une recombinaison non radiative sur une surface du puits quantique en (Alx Iny Ga1-x-y)N.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: Korean (KO)
Also published as:
KR1020080035578JP2008544536US20080157057