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1. (WO2007001063) PIEZOELECTRIC/ELECTROSTRICTION FILM TYPE ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001063 International Application No.: PCT/JP2006/313170
Publication Date: 04.01.2007 International Filing Date: 26.06.2006
IPC:
H01L 41/09 (2006.01) ,H01L 41/08 (2006.01) ,H01L 41/18 (2006.01) ,H01L 41/187 (2006.01) ,H01L 41/193 (2006.01) ,H01L 41/22 (2013.01) ,H01L 41/257 (2013.01) ,H01L 41/39 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
187
Ceramic compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
193
Macromolecular compositions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
253
Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
257
by polarising
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35
Forming piezo-electric or electrostrictive materials
39
Inorganic materials
Applicants:
日本碍子株式会社 NGK INSULATORS, LTD. [JP/JP]; 〒4678530 愛知県名古屋市瑞穂区須田町2番56号 Aichi 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530, JP (AllExceptUS)
吉岡 邦彦 YOSHIOKA, Kunihiko [JP/JP]; JP (UsOnly)
大西 孝生 OHNISHI, Takao [JP/JP]; JP (UsOnly)
山田 智裕 YAMADA, Tomohiro [JP/JP]; JP (UsOnly)
Inventors:
吉岡 邦彦 YOSHIOKA, Kunihiko; JP
大西 孝生 OHNISHI, Takao; JP
山田 智裕 YAMADA, Tomohiro; JP
Agent:
特許業務法人プロスペック特許事務所 PROSPEC PATENT FIRM; 〒4530801 愛知県名古屋市中村区太閤三丁目1番18号 名古屋KSビル12階 Aichi 12th Floor, NAGOYA-KS Building 1-18, Taiko 3-chome, Nakamura-ku Nagoya-shi, Aichi 4530801, JP
Priority Data:
2005-18932629.06.2005JP
2005-33058915.11.2005JP
Title (EN) PIEZOELECTRIC/ELECTROSTRICTION FILM TYPE ELEMENT
(FR) ÉLÉMENT DE TYPE À FILM PIÉZOÉLECTRIQUE/D’ÉLECTROSTRICTION
(JA) 圧電/電歪膜型素子
Abstract:
(EN) On a substrate (1), a lower electrode (4), an auxiliary electrode (8), a piezoelectric/electrostriction film (5), and an upper electrode (6) are successively layered. The lower electrode (4) is formed continuously from one thick portion (2) to thin diaphragm portion (3). The auxiliary electrode (8) is formed continuously from the other thick portion (2) to a position of the thin diaphragm portion (3) which is independent from the lower electrode (4). The upper electrode (6) is formed over the piezoelectric/electrostriction film (5) and the auxiliary electrode (8). Furthermore, the upper electrode (6) and the auxiliary electrode (8) are electrically connected to each other by a connection electrode (20). Thus, there are a plurality of paths electrically connecting the upper electrode (6) to the auxiliary electrode (8). Accordingly, even if a part of the paths is disconnected by destruction of a part of the upper electrode (6) by lowering of the insulation of the piezoelectric/electrostriction film (5), the electrical connection between the upper electrode (6) and the auxiliary electrode (8) can be maintained by the remaining paths.
(FR) Dans la présente invention, une électrode inférieure (4), une électrode auxiliaire (8), un film piézoélectrique/d’électrostriction (5) et une électrode supérieure (6) sont disposés en couches successives sur un substrat (1). L’électrode inférieure (4) est formée en continuation à partir d’une partie épaisse (2) vers une partie à diaphragme mince (3). L’électrode auxiliaire (8) est formée en continuation à partir de l’autre partie épaisse (2) vers une position de la partie à diaphragme mince (3) qui est indépendante par rapport à l’électrode inférieure (4). L’électrode supérieure (6) est formée sur le film piézoélectrique/d’électrostriction (5) et l’électrode auxiliaire (8). En outre, l’électrode supérieure (6) et l’électrode auxiliaire (8) sont connectées électriquement l’une à l’autre par une électrode de connexion (20). Ainsi, il y a une pluralité de cheminements connectant électriquement l’électrode supérieure (6) à l’électrode auxiliaire (8). Par conséquent, même si une partie des cheminements est déconnectée par la destruction d’une partie de l’électrode supérieure (6) par la réduction du film piézoélectrique/d’électrostriction (5), la connexion électrique entre l’électrode supérieure (6) et l’électrode auxiliaire (8) peut être maintenue au moyen des cheminements restants.
(JA) 基板1には、下部電極4及び補助電極8と、圧電/電歪膜5と、上部電極6と、が、順次積層されている。下部電極4は、一方の厚肉部2から薄肉ダイヤフラム部3まで連続して形成されている。補助電極8は、他方の厚肉部2から、薄肉ダイヤフラム部3であって下部電極4とは独立した位置まで連続して形成されている。上部電極6は、圧電/電歪膜5と補助電極8に跨って形成されている。さらに、上部電極6と補助電極8とを電気的に接続する接続電極20が設けられている。これにより、上部電極6と補助電極8とを電気的に接続する複数の経路が設けられる。よって、圧電/電歪膜5の絶縁性の低下に起因する上部電極6の一部の破壊により、一部の経路の接続が絶たれても、残りの経路により、上部電極6と補助電極8との電気的な接続が維持され得る。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP1909340US20080111453