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1. (WO2007001022) METHOD AND APPARATUS FOR FORMING METAL FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/001022 International Application No.: PCT/JP2006/312890
Publication Date: 04.01.2007 International Filing Date: 28.06.2006
Chapter 2 Demand Filed: 01.05.2007
IPC:
H01L 21/285 (2006.01) ,C23C 14/14 (2006.01) ,C23C 14/34 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
14
Metallic material, boron or silicon
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 〒1078481 東京都港区赤坂五丁目3番6号 Tokyo 3-6, Akasaka 5-chome, Minato-ku, Tokyo 1078481, JP (AllExceptUS)
池田 太郎 IKEDA, Taro [JP/JP]; JP (UsOnly)
水澤 寧 MIZUSAWA, Yasushi [JP/US]; US (UsOnly)
波多野 達夫 HATANO, Tatsuo [JP/JP]; JP (UsOnly)
横山 敦 YOKOYAMA, Osamu [JP/JP]; JP (UsOnly)
佐久間 隆 SAKUMA, Takashi [JP/JP]; JP (UsOnly)
Inventors:
池田 太郎 IKEDA, Taro; JP
水澤 寧 MIZUSAWA, Yasushi; US
波多野 達夫 HATANO, Tatsuo; JP
横山 敦 YOKOYAMA, Osamu; JP
佐久間 隆 SAKUMA, Takashi; JP
Agent:
吉武 賢次 YOSHITAKE, Kenji; 〒1000005 東京都千代田区丸の内三丁目2番3号 富士ビル323号 協和特許法律事務所 Tokyo Kyowa Patent & Law Office Room 323, Fuji Bldg. 2-3, Marunouchi 3-chome Chiyoda-ku, Tokyo 100-0005, JP
Priority Data:
2005-18810728.06.2005JP
2005-27704426.09.2005JP
Title (EN) METHOD AND APPARATUS FOR FORMING METAL FILM
(FR) PROCÉDÉ ET APPAREIL POUR FORMER UN FILM MÉTALLIQUE
(JA) 金属膜の成膜方法及び成膜装置
Abstract:
(EN) A metal film forming method is provided with a step of placing a subject, which is to be treated and has a recessed section formed on the surface, on a placing table in a treatment chamber; a step of exhausting the treatment chamber; a step of ionizing a metal target in an exhausted treatment chamber by plasma formed by bringing an inert gas into the plasma state, and generating metal particles including metal ions; and a step wherein a recessed ground portion is formed by grinding a bottom section of the recessed section by applying bias power on the subject placed on the placing table and pulling the plasma and the metal particles into the subject, and a metal film is formed over the entire surface of the subject including the surfaces in the recessed section and the recessed ground section.
(FR) L’invention concerne un procédé de formation de film métallique comportant une étape qui consiste à placer un sujet à traiter et qui a une section en retrait de sa surface, sur une table de placement dans une chambre de traitement ; une étape d'évacuation de la chambre de traitement ; une étape d’ionisation d’une cible métallique dans une chambre de traitement évacuée à l’aide de plasma formé par la mise à l’état de plasma d’un gaz inerte, et générant des particules métalliques y compris des ions métalliques ; et une étape au cours de laquelle une partie moulue en retrait est formée en meulant une section inférieure de la section en retrait par l’application d’un courant de polarisation sur le sujet placé sur la table de placement et en tirant le plasma et les particules métalliques à l’intérieur du sujet, et une film métallique est formé sur la totalité de la surface du sujet, y compris les surfaces dans la section en retrait et la section meulée en retrait.
(JA)  本発明は、処理容器内の載置台上に、表面に凹部が形成された被処理体を載置する工程と、処理容器内を真空引きする工程と、真空引きされた処理容器内で、不活性ガスをプラズマ化して形成されたプラズマによって、金属ターゲットをイオン化させて金属イオンを含む金属粒子を発生させる工程と、前記載置台上に載置された前記被処理体にバイアス電力を印加して、前記プラズマ及び前記金属粒子を当該被処理体に引き込むことにより、前記凹部の底部を削って削り込み凹部を形成すると共に、前記凹部及び前記削り込み凹部内の表面を含む前記被処理体の表面の全体に金属膜を成膜する工程と、を備えたことを特徴とする金属膜の成膜方法である。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020080022221US20090227104CN101213642