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1. (WO2007000718) DOPING PROFILE IMPROVEMENT OF IN-SITU DOPED N-TYPE EMITTERS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/000718 International Application No.: PCT/IB2006/052101
Publication Date: 04.01.2007 International Filing Date: 26.06.2006
IPC:
H01L 21/331 (2006.01) ,H01L 29/08 (2006.01) ,H01L 29/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants:
NXP B.V. [NL/NL]; High Tech Campus 60 NL-5656 AG Eindhoven, NL (AllExceptUS)
DE BOER, Wiebe [NL/NL]; US (UsOnly)
Inventors:
DE BOER, Wiebe; US
Agent:
PENNINGS, Johannes; NXP Semiconductors IP Department High Tech Campus 60 NL-5656 AG Eindhoven, NL
Priority Data:
60/694,56328.06.2005US
Title (EN) DOPING PROFILE IMPROVEMENT OF IN-SITU DOPED N-TYPE EMITTERS
(FR) AMELIORATION DU PROFIL DE DOPAGE D'EMETTEURS DE TYPE N DOPES IN SITU
Abstract:
(EN) A method for forming an emitter-base junction. The method includes the steps of: providing a base layer (26); and growing a doped mono-emitter layer (28) on the base layer (26) using a gas flow comprised of a set of process gases, wherein gas flow includes an addition of a germanium (Ge) source to the process gases for the first few seconds of the gas flow.
(FR) L'invention concerne un procédé destiné à la formation d'une jonction émetteur-base. Ce procédé consiste à fournir une couche de base (26), puis à faire croître une couche mono-émettrice (28) dopée sur la couche de base (26) à l'aide d'un flux gazeux constitué d'un ensemble de gaz de traitement, le flux gazeux comprenant un apport d'une source de germanium (Ge) durant les premières secondes du flux gazeux.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1900015JP2008544566CN101208785