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1. (WO2007000615) HIGH POWER SEMICONDUCTOR LASER DIODE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/000615 International Application No.: PCT/GB2006/050173
Publication Date: 04.01.2007 International Filing Date: 28.06.2006
IPC:
H01S 5/20 (2006.01) ,H01S 5/22 (2006.01) ,H01S 5/042 (2006.01) ,H01S 5/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
Applicants:
BOOKHAM TECHNOLOGY PLC [GB/GB]; Caswell Towcester Northamptonshire NN12 8EQ, GB (AllExceptUS)
HARDER, Christoph [CH/CH]; CH (UsOnly)
JAKUBOWICZ, Abram [IL/CH]; CH (UsOnly)
MATUSCHEK, Nicolai [DE/CH]; CH (UsOnly)
TROGER, Joerg [CH/CH]; CH (UsOnly)
SCHWARZ, Michael [CH/CH]; CH (UsOnly)
Inventors:
HARDER, Christoph; CH
JAKUBOWICZ, Abram; CH
MATUSCHEK, Nicolai; CH
TROGER, Joerg; CH
SCHWARZ, Michael; CH
Agent:
HARDING, Richard; Marks & Clerk 4220 Nash Court Oxford Business Park South Oxford Oxfordshire OX4 2RU, GB
Priority Data:
0513039.828.06.2005GB
Title (EN) HIGH POWER SEMICONDUCTOR LASER DIODE
(FR) DIODE LASER A SEMI-CONDUCTEUR HAUTE PUISSANCE
Abstract:
(EN) Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto- electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.
(FR) Des diodes laser à semi-conducteurs, en particulier des diodes laser à un seul émetteur grande surface (BASE), de haute puissance de sortie lumineuse, sont couramment utilisées en optoélectronique. La puissance de sortie lumineuse et la stabilité de telles diodes laser sont d'un intérêt capital, et toute dégradation durant l'utilisation normale est un inconvénient majeur. L'invention concerne une conception améliorée de ces diodes laser, l'amélioration minimisant notamment, ou supprimant, la dégradation en section terminale (frontale), à des puissances de sortie lumineuse très élevées, ceci en contrôlant de façon définie la circulation du courant dans la diode laser. Ce résultat est obtenu par contrôle de l'injection de porteuses, c'est-à-dire de l'injection de courant, dans la diode laser, suivant un nouveau mode, à savoir, par création de points uniques d'injections sur l'extension longitudinale de la diode laser, par exemple, le long du guide d'ondes. De plus, l'alimentation intensité/tension de chaque point ou groupe de points d'injection de courant peut être réglée séparément, ce qui accroît la possibilité de contrôle de l'injection des porteuses.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP1897190JP2008544561US20100189152CN101213712