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1. (WO2007000614) HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2007/000614 International Application No.: PCT/GB2006/050172
Publication Date: 04.01.2007 International Filing Date: 28.06.2006
IPC:
H01S 5/042 (2006.01) ,H01S 5/16 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
16
Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
Applicants:
BOOKHAM TECHNOLOGY PLC [GB/GB]; Caswell Towcester Northamptonshire NN12 8EQ, GB (AllExceptUS)
HARDER, Christoph [CH/CH]; CH (UsOnly)
JAKUBOWICZ, Abram [IL/CH]; CH (UsOnly)
MATUSCHEK, Nicolai [DE/CH]; CH (UsOnly)
TROGER, Joerg [CH/CH]; CH (UsOnly)
SCHWARZ, Michael [CH/CH]; CH (UsOnly)
Inventors:
HARDER, Christoph; CH
JAKUBOWICZ, Abram; CH
MATUSCHEK, Nicolai; CH
TROGER, Joerg; CH
SCHWARZ, Michael; CH
Agent:
HARDING, Richard; Marks & Clerk 4220 Nash Court Oxford Business Park South Oxford Oxfordshire OX4 2RU, GB
Priority Data:
0513038.028.06.2005GB
Title (EN) HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE
(FR) DISPOSITIF OPTOÉLECTRONIQUE À SEMI-CONDUCTEURS ET PUISSANCE ÉLEVÉE
Abstract:
(EN) Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current -blocking isolation layer (14) is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.
(FR) La présente invention concerne des diodes laser à semi-conducteurs, et notamment des diodes laser BASE (émetteur étendu à zone unique) à forte puissance de production lumineuse, communément utilisées dans des applications optoélectroniques. La puissance de production lumineuse et la stabilité desdites diodes laser sont d'un intérêt crucial et toute dégradation lors d'une utilisation normale constitue un inconvénient significatif. La présente invention concerne une conception améliorée desdites diodes laser qui, en particulier, réduit considérablement ou évite la dégradation des diodes laser à des puissances de production lumineuse très élevées en contrôlant le flux de courant dans la diode de manière définie. La réduction ou la suppression de la dégradation de la section d'extrémité (avant) desdites diodes augmente considérablement la stabilité à long terme par rapport aux conceptions actuelles. On y parvient en contrôlant l'injection de porteuse dans la diode laser au voisinage de ses facettes de manière à éviter les pics de courant à injection abrupte. Pour cela, une couche d'isolation bloquant le courant (14) est façonnée sur son bord ou sa limite de manière à montrer une structure mécanique inégale ou partiellement discontinue, menant à une baisse efficace de l'isolation vers le bord de ladite couche, assurant ainsi une transition essentiellement non abrupte ou même approximativement continue entre les zones isolées et les zones non isolées.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2008544560US20100220762