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Machine translation
1. (WO2006133163) INTERNAL GETTERING BY METAL ALLOY CLUSTERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/133163    International Application No.:    PCT/US2006/021876
Publication Date: 14.12.2006 International Filing Date: 06.06.2006
IPC:
H01L 31/18 (2006.01), H01L 31/028 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; Office Of Technology Licensing, 2150 Shattuck Ave., Suite 510, Berkeley, CA 94720-1620 (US) (For All Designated States Except US).
BUONASSISI, Anthony [US/US]; (US) (For US Only).
HEUER, Matthias [DE/US]; (US) (For US Only).
ISTRATOV, Andrei [RU/US]; (US) (For US Only).
PICKETT, Matthew, D. [US/US]; (US) (For US Only).
MARCUS, Matthew, A. [US/US]; (US) (For US Only).
WEBER, Eicke, R. [US/US]; (US) (For US Only)
Inventors: BUONASSISI, Anthony; (US).
HEUER, Matthias; (US).
ISTRATOV, Andrei; (US).
PICKETT, Matthew, D.; (US).
MARCUS, Matthew, A.; (US).
WEBER, Eicke, R.; (US)
Agent: MICHAELSON, Peter, L.; Michaelson & Associates, P.O. Box 8489, Red Bank, NJ 07701-8489 (US)
Priority Data:
60/688,041 07.06.2005 US
11/447,223 05.06.2006 US
Title (EN) INTERNAL GETTERING BY METAL ALLOY CLUSTERS
(FR) GETTERING INTERNE PAR AGREGATS D'ALLIAGE METALLIQUE
Abstract: front page image
(EN)The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations . Novel compositions for some of the metal alloy clusters are also described.
(FR)La présente invention concerne la capture interne par effet getter des impuretés dans les semi-conducteurs, au moyen d'agrégats d'alliage métallique. De manière plus spécifique, l'invention porte sur des agrégats d'alliages métallique formés dans le silicium, ces agrégats contenant au moins deux espèces de métaux de transition. Ces agrégats présentent des températures de fusion inférieures à celles du matériau hôte, et se sont montrés particulièrement efficaces pour capter par effet getter des impuretés présentes dans le silicium, et les collecter dans des emplacements isolés, moins dommageables. L'invention concerne également de nouvelles compositions pour certains de ces agrégats d'alliages métalliques.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)