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Machine translation
1. (WO2006127885) COPPER PASSIVATING POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION AND METHOD OF USE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/127885    International Application No.:    PCT/US2006/020214
Publication Date: 30.11.2006 International Filing Date: 25.05.2006
IPC:
C11D 3/43 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive, Danbury, Connecticut 06810 (US) (For All Designated States Except US).
BARNES, Jeffrey [US/US]; (US) (For US Only).
WALKER, Elizabeth [US/US]; (US) (For US Only).
PETERS, Darryl W. [US/US]; (US) (For US Only).
BARTOSH, Kyle [US/US]; (US) (For US Only).
OLDAK, Ewa [PL/PL]; (PL) (For US Only).
YANDERS, Kevin P. [US/US]; (US) (For US Only)
Inventors: BARNES, Jeffrey; (US).
WALKER, Elizabeth; (US).
PETERS, Darryl W.; (US).
BARTOSH, Kyle; (US).
OLDAK, Ewa; (PL).
YANDERS, Kevin P.; (US)
Agent: FUIERER, Tristan A.; MOORE & VAN ALLEN PLLC, Post Office Box 13706, Research Triangle Park, North Carolina 27709 (US)
Priority Data:
60/684,812 26.05.2005 US
60/736,036 10.11.2005 US
60/773,126 13.02.2006 US
Title (EN) COPPER PASSIVATING POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION AND METHOD OF USE
(FR) COMPOSITION DE NETTOYAGE A POLISSAGE MECANIQUE POST-CHIMIQUE A PASSIVATION DE CUIVRE ET PROCEDE D'UTILISATION
Abstract: front page image
(EN)Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.
(FR)Compositions de nettoyage alcalines aqueuses et procédés pour le nettoyage de résidu de polissage mécanique post-chimique, de résidu de post-attaque et/ou de contaminants à partir d'un dispositif micro-électronique qui comporte ce type de résidu et de contaminants. Les compositions renferment une amine, un agent de passivation et de l'eau. Elles assurent un nettoyage très efficace du résidu et des contaminants sur le dispositif avec une passivation simultanée du matériau d'interconnexion métallique
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)