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1. WO2006127725 - ISOLATION PROCESS AND STRUCTURE FOR CMOS IMAGERS

Publication Number WO/2006/127725
Publication Date 30.11.2006
International Application No. PCT/US2006/019954
International Filing Date 24.05.2006
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
H01L 27/14683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
H01L 27/14689
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
14689MOS based technologies
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US] (AllExceptUS)
  • BRADY, Frederick, T. [US]/[US] (UsOnly)
  • PATRICK, Inna [RU]/[US] (UsOnly)
Inventors
  • BRADY, Frederick, T.
  • PATRICK, Inna
Agents
  • D'AMICO, Thomas, J.
Priority Data
11/135,51724.05.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ISOLATION PROCESS AND STRUCTURE FOR CMOS IMAGERS
(FR) STRUCTURE ET PROCEDE D'ISOLATION POUR DISPOSITIFS D'IMAGERIE CMOS
Abstract
(EN)
A barrier implanted region of a first conductivity type formed (199, 299) in lieu of an isolation region of a pixel sensor cell that provides physical and electrical isolation of photosensitive elements (100, 100a) of adjacent pixel sensor cells of a CMOS imager. The barrier implanted region comprises a first region (199) having a first width and a second region (299) having a second width greater than the first width, the second region (299) being located below the first region (199) . The first region (199) is laterally spaced from doped regions (126, 126a) of a second conductivity type of adjacent photodiodes (100, 100a) of pixel sensor cells of a CMOS imager.
(FR)
Cette invention concerne une région d'isolation implantée présentant un premier type de conductivité (199, 299) formée de manière à constituer une région d'isolation d'une cellule de détection de pixels permettant une isolation électrique et physique des éléments photosensibles (100, 100a) de cellules de détection de pixels adjacentes d'un dispositif d'imagerie CMOS. La région d'isolation implantée comprend une première région (199) présentant une première largeur et une seconde région (299) présentant une seconde largeur supérieure à la première largeur, la seconde région (299) étant placée en dessous de la première région (199). La première région (199) latéralement espacée des régions dopées (126, 126a) présentant un second type de conductivité de photodiodes adjacentes (100, 100a) des cellules de détection de pixels d'un dispositif d'imagerie CMOS.
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