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1. WO2006127030 - HIGH EFFICACY WHITE LED

Publication Number WO/2006/127030
Publication Date 30.11.2006
International Application No. PCT/US2005/032895
International Filing Date 15.09.2005
IPC
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 2933/0091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0091Scattering means in or on the semiconductor body or semiconductor body package
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/507
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
507the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Applicants
  • CREE, INC. [US]/[US] (AllExceptUS)
  • IBBETSON, James [GB]/[US] (UsOnly)
Inventors
  • IBBETSON, James
Agents
  • SUMMA, Philip
Priority Data
60/683,02720.05.2005US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) HIGH EFFICACY WHITE LED
(FR) DIODE ELECTROLUMINESCENTE BLANCHE A HAUT RENDEMENT
Abstract
(EN) A white light emitting solid-state lamp is disclosed having an output of at least 75 lumens per watt at 20 milliamps drive current. The lamp includes a light emitting diode, an encapsulant, and a header. The diode includes a conductive silicon carbide substrate for electrical contact and a Group III nitride active portion on the silicon carbide substrate for generating desired frequency photons under the application of current across the diode. The header includes a reflective cup for supporting the diode and for providing electrical contact to the diode and to the active portion. The encapsulant includes a phosphor, present in at least portions of the encapsulant for generating responsive frequencies when the phosphor is excited by the frequencies emitted by the diode.
(FR) L'invention concerne une lampe à diode électroluminescente à émission de lumière blanche ayant un rendement d'au moins 75 lumens par watt à un courant d'attaque de 20 milliampères. La lampe inclut une diode électroluminescente, un matériau d'encapsulation et une embase. La diode inclut un substrat de carbure de silicium conducteur pour le contact électrique et une partie active en nitrure du groupe III sur le substrat de carbure de silicium pour générer des photons de fréquence voulue par l'application d'un courant aux bornes de la diode. L'embase inclut une cloche réfléchissante pour soutenir la diode et pour mettre en contact électrique celle-ci ainsi que la partie active. Le matériau d'encapsulation inclut un phosphore, présent au moins dans certaines parties de ce même matériau pour générer des fréquences sensibles lorsque le phosphore est excité par les fréquences émises par la diode.
Related patent documents
EP5797531This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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