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1. WO2006126365 - METHOD FOR CLEANING POLYCRYSTALLINE SILICON

Publication Number WO/2006/126365
Publication Date 30.11.2006
International Application No. PCT/JP2006/308754
International Filing Date 26.04.2006
IPC
C01B 33/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
C30B 29/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
CPC
C01B 33/037
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
037Purification
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Y02P 70/50
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
70Climate change mitigation technologies in the production process for final industrial or consumer products
50Manufacturing or production processes characterised by the final manufactured product
Applicants
  • 住友チタニウム株式会社 SUMITOMO TITANIUM CORPORATION [JP]/[JP] (AllExceptUS)
  • 山脇 健治 YAMAWAKI, Kenji [JP]/[JP] (UsOnly)
Inventors
  • 山脇 健治 YAMAWAKI, Kenji
Agents
  • 柳舘 隆彦 YANAGIDATE, Takahiko
Priority Data
2005-14948623.05.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR CLEANING POLYCRYSTALLINE SILICON
(FR) PROCÉDÉ SERVANT À NETTOYER DU SILICIUM POLYCRISTALLIN
(JA) 多結晶シリコン洗浄方法
Abstract
(EN)
This invention provides a method for cleaning polycrystalline silicon that can realize a high level of cleaning of a polycrystalline silicon used as a material for melting, for example, in the production of a silicon single crystal for semiconductors by a CZ pull-up method and the production of a polycrystalline silicon for solar batteries, can lower a cleaning cost, can reduce a silicon loss, the amount of a liquid chemical used, and the load on an environment by a liquid waste, and can solve the problem of NOx gas evolution. In this method, a polycrystalline silicon (1) for a melting material is cleaned with hydrofluoric acid to remove a highly contaminated oxide film (2) formed on the surface of the polycrystalline silicon (1). Thereafter, if necessary, light etching with fluoronitric acid is carried out. More preferably, a water vapor-containing clean gas is introduced into a reduction reaction furnace in a period between after the production of a polycrystalline silicon within a reduction reaction furnace and before the reduction reaction furnace is opened, thereby forming an oxide film suffering from no significant contamination on the surface of the polycrystalline silicon.
(FR)
Cette invention concerne un procédé servant à nettoyer du silicium polycristallin qui peut permettre de réaliser un niveau de nettoyage élevé de silicium polycristallin utilisé comme matière destinée à être fondue, par exemple lors de la production d'un monocristal de silicium pour des semi-conducteurs par un procédé de tirage de cristal de Czochralski et lors de la production de silicium polycristallin pour des batteries solaires, qui peut réduire le coût du nettoyage, qui peut réduire la perte de silicium, la quantité de produit chimique liquide utilisé et la charge sur l'environnement par un rejet liquide et qui peut résoudre le problème de dégagement de NOx gazeux. Dans ce procédé, on nettoie avec de l'acide fluorhydrique du silicium polycristallin (1) destiné à une matière à faire fondre pour enlever un film d'oxyde fortement contaminé (2) formé sur la surface du silicium polycristallin (1). Après cela, si nécessaire, on effectue un décapage léger avec de l'acide nitrique fluoré. De façon plus particulièrement préférable, on introduit un gaz de nettoyage contenant de la vapeur d'eau dans un four de réaction de réduction au cours d'une période comprise entre après la production de silicium polycristallin à l'intérieur d'un four de réaction de réduction et avant l'ouverture du four de réaction de réduction, ce qui forme de cette manière un film d'oxyde ne souffrant d'aucune contamination importante sur la surface du silicium polycristallin.
(JA)
 CZ引上げ法による半導体用シリコン単結晶の製造や、太陽電池用多結晶シリコンの製造等に溶解原料として使用される多結晶シリコンを高度に洗浄する。洗浄コストを下げる。シリコンロス、薬液使用量、廃液による環境負荷を軽減する。NOxガス発生の問題を解決する。これらを実現するために、溶解原料用の多結晶シリコン1にフッ酸による洗浄処理を行い、多結晶シリコン1の表面に形成された汚染度の高い酸化膜2を除去する。その後、必要に応じてフッ硝酸による軽度のエッチング処理を行う。より好ましくは、還元反応炉内で多結晶シリコンを製造した後、還元反応炉を開放する前に、還元反応炉内に水蒸気を含む清浄なガスを導入し、多結晶シリコンの表面に汚染が少ない酸化膜を形成する。
Also published as
EP6732360
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