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1. (WO2006126319) HIGH-ELECTRON-MOBILITY TRANSISTOR, FIELD-EFFECT TRANSISTOR, EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/126319    International Application No.:    PCT/JP2006/304043
Publication Date: 30.11.2006 International Filing Date: 03.03.2006
IPC:
H01L 21/338 (2006.01), H01L 21/205 (2006.01), H01L 29/778 (2006.01), H01L 29/812 (2006.01)
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP) (For All Designated States Except US).
HASHIMOTO, Shin; (For US Only).
KIYAMA, Makoto; (For US Only).
SAKURADA, Takashi; (For US Only).
TANABE, Tatsuya; (For US Only).
MIURA, Kouhei; (For US Only).
MIYAZAKI, Tomihito; (For US Only)
Inventors: HASHIMOTO, Shin; .
KIYAMA, Makoto; .
SAKURADA, Takashi; .
TANABE, Tatsuya; .
MIURA, Kouhei; .
MIYAZAKI, Tomihito;
Agent: NAKANO, Minoru; c/o Sumitomo Electric Industries, Ltd., 1-3, Shimaya 1-chome, Konohana-ku, Osaka-shi, Osaka 5540024 (JP)
Priority Data:
2005-154406 26.05.2005 JP
Title (EN) HIGH-ELECTRON-MOBILITY TRANSISTOR, FIELD-EFFECT TRANSISTOR, EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE TRANSISTOR
(FR) TRANSISTOR A HAUTE MOBILITE D’ELECTRONS, TRANSISTOR A EFFET DE CHAMP, SUBSTRAT EPITAXIAL, PROCEDE DE FABRICATION DE SUBSTRAT EPITAXIAL ET PROCEDE DE FABRICATION DE TRANSISTOR A NITRURE DU GROUPE III
(JA) 高電子移動度トランジスタ、電界効果トランジスタ、エピタキシャル基板、エピタキシャル基板を作製する方法およびIII族窒化物系トランジスタを作製する方法
Abstract: front page image
(EN)Disclosed is a high-electron-mobility transistor having a high-purity channel layer and a high-resistance buffer layer. Specifically disclosed is a high-electron-mobility transistor (11) comprising a supporting base (13) composed of a gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and an electrode structure (a gate electrode (21), a source electrode (23) and a drain electrode (25)) for the transistor (11). The band gap of the third gallium nitride semiconductor is larger than that of the second gallium nitride semiconductor. The carbon concentration Nc1 in the first gallium nitride semiconductor is not less than 4 × 1017 cm-3, and the carbon concentration Nc2 in the second gallium nitride semiconductor is less than 4 × 1016 cm-3.
(FR)L’invention concerne un transistor à haute mobilité d’électrons doté d’une couche de canal de grande pureté et d’une couche tampon à forte résistance. Plus spécifiquement, l’invention concerne un transistor à haute mobilité d’électrons (11) comprenant une base de support (13) composée de nitrure de gallium, une couche tampon (15) composée d’un premier semi-conducteur à nitrure de gallium, une couche de canal (17) composée d’un deuxième semi-conducteur à nitrure de gallium, une couche semiconductrice (19) composée d’un troisième semi-conducteur à nitrure de gallium et une structure d’électrodes (une électrode grille (21), une électrode source (23) et une électrode de drain (25)) pour le transistor (11). La largeur de bande interdite du troisième semi-conducteur est supérieure à celle du deuxième. La concentration en carbone Nc1 du premier semi-conducteur n’est pas inférieure à 4 × 1017 cm-3 et la concentration en carbone Nc2 du second semi-conducteur est inférieure à 4 × 1016 cm-3.
(JA) 高純度なチャネル層および高抵抗のバッファ層を有する高電子移動度トランジスタを提供する。  高電子移動度トランジスタ11は、窒化ガリウムからなる支持基体13と、第1の窒化ガリウム系半導体からなるバッファ層15と、第2の窒化ガリウム系半導体からなるチャネル層17と、第3の窒化ガリウム系半導体からなる半導体層19と、当該トランジスタ11のための電極構造(ゲート電極21、ソース電極23およびドレイン電極25)とを備える。第3の窒化ガリウム系半導体のバンドギャップは第2の窒化ガリウム系半導体のバンドギャップより大きい。第1の窒化ガリウム系半導体の炭素濃度NC1は4×1017cm-3以上である。第2の窒化ガリウム系半導体の炭素濃度NC2は4×1016cm-3未満である。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)