Processing

Please wait...

Settings

Settings

Goto Application

1. WO2006125509 - METHOD AND APPARATUS FOR A POST EXPOSURE BAKE OF A RESIST

Publication Number WO/2006/125509
Publication Date 30.11.2006
International Application No. PCT/EP2006/004050
International Filing Date 29.04.2006
Chapter 2 Demand Filed 08.02.2007
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/38 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
CPC
G03F 7/203
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
203comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
G03F 7/38
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
38Treatment before imagewise removal, e.g. prebaking
Applicants
  • QIMONDA AG [DE]/[DE] (AllExceptUS)
  • ELIAN, Klaus [DE]/[DE] (UsOnly)
  • SEBALD, Michael [DE]/[DE] (UsOnly)
Inventors
  • ELIAN, Klaus
  • SEBALD, Michael
Agents
  • WILHELM, Jürgen
Priority Data
11/135,63424.05.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR A POST EXPOSURE BAKE OF A RESIST
(FR) PROCEDE ET APPAREIL DESTINES A UNE CUISSON POST-EXPOSITION D'UNE EPARGNE
Abstract
(EN)
In a Method for patterning a chemically amplified resist layer, the resist layer is provided on a substrate, the resist layer comprising resist molecules in a first state with a first solubility. Predetermined regions of the resist layer are exposed to a first radiation to generate a catalytic species in the exposed predetermined regions of the resist layer. The resist layer is exposed to a second radiation and resist molecules in the predetermined regions of the resist layer are converted from the first state into a second state with a second solubility, the conversion of a resist molecule being catalyzed by the catalytic species, and the activation energy of the catalyzed conversion of the resist molecule being lowered by the absorption of the second radiation in the resist molecule. The resist layer is developed with a predetermined developer.
(FR)
L'invention concerne un procédé permettant de structurer une couche d'épargne amplifiée sur le plan chimique, ladite couche étant placée sur un substrat et comprenant des molécules d'épargne dans un premier état avec une première solubilité. Des régions prédéterminées de la couche d'épargne sont exposées à un premier rayonnement, aux fins de production d'espèces catalytiques dans les régions prédéterminées exposées de la couche d'épargne. La couche d'épargne est exposée à un second rayonnement et des molécules d'épargne dans les régions prédéterminées de la couche d'épargne sont converties du premier état à un second état avec une seconde solubilité, la conversion d'une molécule d'épargne étant catalysée par les espèces catalytiques et l'énergie d'activation de la conversion catalysée de la molécule d'épargne étant réduite par l'absorption du second rayonnement dans la molécule d'épargne. La couche d'épargne est développée au moyen d'un développant prédéterminé.
Latest bibliographic data on file with the International Bureau