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1. (WO2006125371) POLISHING SLURRY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/125371    International Application No.:    PCT/CN2006/000972
Publication Date: 30.11.2006 International Filing Date: 15.05.2006
Chapter 2 Demand Filed:    12.03.2007    
C09G 1/02 (2006.01)
Applicants: ANJI MICROELECTRONICS (SHANGHAI) CO., LTD [CN/CN]; Suite 613-618, The Fifth Building No. 3000 Longdong Avenue Zhangjiang Hi-tech Park Pudong Shanghai 201203 (CN) (For All Designated States Except US).
SHIAO, Danny, Zhenglong [CN/CN]; (CN) (For US Only).
YANG, Andy, Chunxiao [CN/CN]; (CN) (For US Only)
Inventors: SHIAO, Danny, Zhenglong; (CN).
YANG, Andy, Chunxiao; (CN)
Agent: ZHENGHAN LAW FIRM; 18F, North Tower of Shanghai Stock Exchange Blg. 528 Pu Dong (South) Road Shanghai 200120 (CN)
Priority Data:
200510025866.9 17.05.2005 CN
(ZH) 抛光浆料
Abstract: front page image
(EN)The present invention discloses a polishing slurry for CMP, the said polishing slurry contains polishing abrasive grains, a carrier and an additive, wherein the additive has a hydrophilic group. The properties of the passive film can be changed by altering the structure of the additive in the polishing slurry, thereby it can completely avoid the defect on the polished surface of a substrate ,or it can minimize the rate of defect.
(FR)La présente invention a trait à une suspension de polissage pour le polissage mécano-chimique, ladite suspension de polissage contenant des grains de polissage abrasifs, un support et un additif, ledit additif comprenant un groupe hydrophile. Les propriétés de la couche passive peuvent être modifiées par la modification de la structure de l'additif dans la suspension de polissage, permettant ainsi d'éviter le défaut sur la surface polie d'un substrat, ou de minimiser le taux de défauts.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)