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1. WO2006125313 - METHOD FOR PREPARING NANOCRYSTALLINE SILICON IN SIO2 AND FREESTANDING SILICON NANOPARTICLES

Publication Number WO/2006/125313
Publication Date 30.11.2006
International Application No. PCT/CA2006/000851
International Filing Date 26.05.2006
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
B81C 5/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
5Processes or apparatus not provided for in groups B81C1/ or B81C3/110
H01L 29/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
H01L 29/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
04characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 33/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
C01B 33/021
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
H01L 21/02134
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
02134the material comprising hydrogen silsesquioxane, e.g. HSQ
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
H01L 21/02337
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02318post-treatment
02337treatment by exposure to a gas or vapour
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
Applicants
  • THE GOVERNORS OF THE UNIVERSITY OF ALBERTA [CA]/[CA] (AllExceptUS)
  • VEINOT, Jonathan, Gordon, Conn [CA]/[CA] (UsOnly)
  • HESSEL, Colin, Michael [CA]/[CA] (UsOnly)
Inventors
  • VEINOT, Jonathan, Gordon, Conn
  • HESSEL, Colin, Michael
Agents
  • BERESKIN & PARR
Priority Data
60/684,98727.05.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR PREPARING NANOCRYSTALLINE SILICON IN SIO2 AND FREESTANDING SILICON NANOPARTICLES
(FR) PROCEDES DE PREPARATION DE SILICIUM NANOCRISTALLIN DANS DU SIO2 ET DE NANOPARTICULES DE SILICIUM AUTONOMES
Abstract
(EN)
Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.
(FR)
L'invention concerne des procédés permettant de préparer des composites Si/SiO2 nanocristallins par traitement au silselsquioxane d'hydrogène (HSQ), dans des conditions de polymérisation thermique réductrices. L'invention concerne également des procédés permettant de préparer des nanoparticules de silicium par attaque à l'acide des composites Si/SiO2 nanocristallins.
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