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1. (WO2006124387) GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/124387    International Application No.:    PCT/US2006/017823
Publication Date: 23.11.2006 International Filing Date: 09.05.2006
IPC:
H01L 29/778 (2006.01), H01L 21/335 (2006.01), H01L 29/20 (2006.01)
Applicants: RAYTHEON COMPANY [US/US]; 870 Winter Street Waltham, MA 02451-1449 (US) (For All Designated States Except US).
HOKE, William, E. [US/US]; (US) (For US Only).
MOSCA, John, J. [US/US]; (US) (For US Only)
Inventors: HOKE, William, E.; (US).
MOSCA, John, J.; (US)
Agent: MOFFORD, Donald, F.; Daly, Crowley, Mofford & Durkee, LLP, Suite 301a, 354a Turnpike Street, Canton, Massachusetts 02021 (US)
Priority Data:
11/132,533 19.05.2005 US
Title (EN) GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE
(FR) STRUCTURE DE TRANSISTOR A HAUTE MOBILITE D'ELECTRONS A BASE DE NITRURE DE GALLIUM
Abstract: front page image
(EN)A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
(FR)La présente invention concerne une structure semi-conductrice comprenant un substrat, une première couche de nitrure d'aluminium (AlN) qui présente un rapport de flux d'aluminium/nitrure réactif (Al/N) inférieur à 1 et qui se trouve sur le substrat, ainsi qu'une seconde couche d'AlN qui présente un rapport de flux Al/N réactif supérieur à 1 et qui se trouve sur la première couche d'AlN. Le substrat est un composé de silicium et la première couche d'AlN est sensiblement exempte de silicium.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)