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1. (WO2006123540) GROUP 3-5 NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING GROUP 3-5 NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND SEMICONDUCTOR ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/123540    International Application No.:    PCT/JP2006/309166
Publication Date: 23.11.2006 International Filing Date: 02.05.2006
IPC:
H01L 21/205 (2006.01), C30B 29/38 (2006.01), H01L 33/12 (2010.01), H01L 33/32 (2010.01), H01S 5/323 (2006.01)
Applicants: SUMITOMO CHEMICAL COMPANY, LIMITED [JP/JP]; 27-1, Shinkawa 2-chome, Chuo-ku, Tokyo 1048260 (JP) (For All Designated States Except US).
National University Corporation Mie University [JP/JP]; 1577, Kurimamachiyacho, Tsu-shi, Mie 5148507 (JP) (For All Designated States Except US).
HIRAMATSU, Kazumasa [JP/JP]; (JP) (For US Only).
MIYAKE, Hideto [JP/JP]; (JP) (For US Only).
TSUCHIDA, Yoshihiko [JP/JP]; (JP) (For US Only).
ONO, Yoshinobu [JP/JP]; (JP) (For US Only).
NISHIKAWA, Naohiro [JP/JP]; (JP) (For US Only)
Inventors: HIRAMATSU, Kazumasa; (JP).
MIYAKE, Hideto; (JP).
TSUCHIDA, Yoshihiko; (JP).
ONO, Yoshinobu; (JP).
NISHIKAWA, Naohiro; (JP)
Agent: ASAMURA, Kiyoshi; Room 331, New Ohtemachi Bldg. 2-1, Ohtemachi 2-chome Chiyoda-ku, Tokyo 1000004 (JP)
Priority Data:
2005-146346 19.05.2005 JP
2005-256022 05.09.2005 JP
Title (EN) GROUP 3-5 NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING GROUP 3-5 NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND SEMICONDUCTOR ELEMENT
(FR) SUBSTRAT MULTICOUCHE SEMI-CONDUCTEUR CONTENANT 3 A 5 GROUPES NITRURE, PROCEDE DE FABRICATION D’UN SUBSTRAT AUTO-PORTEUR SEMI-CONDUCTEUR CONTENANT 3 A 5 GROUPES NITRURE, ET ELEMENT SEMI-CONDUCTEUR
(JA) 3-5族窒化物半導体積層基板、3-5族窒化物半導体自立基板の製造方法、及び半導体素子
Abstract: front page image
(EN)A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
(FR)L’invention fournit un substrat multicouche semi-conducteur contenant 3 à 5 groupes nitrure (1) et un procédé pour fabriquer un tel substrat. Une couche semi-conductrice (12) est formée sur un substrat de base (11), et un masque (13) est formé sur la couche semi-conductrice (12). Puis, après la formation d'une couche cristalline semi-conductrice contenant 3 à 5 groupes nitrure (14) par développement sélectif, la couche cristalline semi-conductrice contenant 3 à 5 groupes nitrure (14) et le substrat de base (11) sont séparés. La cristalinité de la couche semi-conductrice (12) est inférieure à celle de la couche cristalline semi-conductrice contenant 3 à 5 groupes nitrure (14).
(JA)3-5族窒化物半導体積層基板1及びその製造方法。下地基板11上に半導体層12を形成し、半導体層12上にマスク13を形成する。そして、選択成長によって3-5族窒化物半導体結晶層14を形成した後、3-5族窒化物半導体結晶層14と下地基板11とを分離する。半導体層12は、3-5族窒化物半導体結晶層14より結晶性が低い。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)