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Machine translation
1. (WO2006118787) A SEMICONDUCTOR DEVICE HAVING A GATE DIELECTRIC OF DIFFERENT BLOCKING CHARACTERISTICS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/118787    International Application No.:    PCT/US2006/014628
Publication Date: 09.11.2006 International Filing Date: 19.04.2006
Chapter 2 Demand Filed:    28.02.2007    
IPC:
H01L 21/8234 (2006.01)
Applicants: ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, CA 94088-3453 (US) (For All Designated States Except US).
WIECZOREK, Karsten [DE/DE]; (DE) (For US Only).
RAAB, Michael [DE/DE]; (DE) (For US Only).
ROMERO, Karla [HN/DE]; (DE) (For US Only)
Inventors: WIECZOREK, Karsten; (DE).
RAAB, Michael; (DE).
ROMERO, Karla; (DE)
Agent: DRAKE, Paul, S.; Advanced Micro Devices, Inc., 5204 East Ben White Boulevard, Mail Stop 562, Austin, TX 78741 (US).
PFAU, Anton, K.; Grünecker, Kinkeldey, Stockmair & Schwanhäusser, Maximilianstraße 58, 80538 München (DE)
Priority Data:
10 2005 020 058.3 29.04.2005 DE
11/284,270 21.11.2005 US
Title (EN) A SEMICONDUCTOR DEVICE HAVING A GATE DIELECTRIC OF DIFFERENT BLOCKING CHARACTERISTICS
(FR) DISPOSITIF SEMICONDUCTEUR COMPRENANT UN DIELECTRIQUE DE GRILLE AUX CARACTERISTIQUES DE BLOCAGE DIFFERENTES
Abstract: front page image
(EN)By locally adapting the blocking capability of gate insulation layers 205A, 205B for N-channel transistors and P-channel transistors, the reliability and threshold stability of the P-channel transistor may be enhanced, while nevertheless electron mobility of the N-channel transistor may be kept at a high level. This may be accomplished by incorporating a different amount of a dielectric dopant into respective gate insulation layer portions 205A, 205B.
(FR)L'invention permet, en adaptant localement la capacité de blocage de couches isolantes de grille 205A, 205B de transistors à canal N et de transistors à canal P, d'améliorer la fiabilité et la stabilité de seuil du transistor à canal P, tout en maintenant néanmoins à un niveau élevé la mobilité des électrons du transistor à canal N. On parvient à ce résultat en incorporant une quantité différente de dopant dans des parties des couches isolantes de grille respectives 205A, 205B.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)