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Machine translation
1. (WO2006118786) TECHNIQUE FOR FORMING A CONTACT INSULATION LAYER WITH ENHANCED STRESS TRANSFER EFFICIENCY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/118786    International Application No.:    PCT/US2006/014627
Publication Date: 09.11.2006 International Filing Date: 19.04.2006
Chapter 2 Demand Filed:    28.02.2007    
IPC:
H01L 21/336 (2006.01)
Applicants: ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place, Mail Stop 68, P.O. Box 3453, Sunnyvale, California 94088-3453 (US) (For All Designated States Except US).
KAMMLER, Thorsten [DE/DE]; (DE) (For US Only).
WEI, Andy [US/DE]; (DE) (For US Only).
LENSKI, Markus [DE/DE]; (DE) (For US Only)
Inventors: KAMMLER, Thorsten; (DE).
WEI, Andy; (DE).
LENSKI, Markus; (DE)
Agent: DRAKE, Paul, S.; Advanced Micro Devices, Inc., 5204 East Ben White Boulevard, Mail Stop 562, Austin, Texas 78741 (US).
PFAU, Anton, K.; Grünecker, Kinkeldey, Stockmair & Schwanhäusser, Maximilianstraße 58, 80538 München (DE)
Priority Data:
10 2005 020 133.4 29.04.2005 DE
11/288,673 29.11.2005 US
Title (EN) TECHNIQUE FOR FORMING A CONTACT INSULATION LAYER WITH ENHANCED STRESS TRANSFER EFFICIENCY
(FR) TECHNIQUE PERMETTANT DE FORMER UNE COUCHE DE CONTACT ISOLANTE AVEC UNE PLUS GRANDE EFFICACITE DE TRANSFERT DE CONTRAINTE
Abstract: front page image
(EN)By removing an outer spacer 109, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal suicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer 115 may be positioned more closely to the channel region, thereby allowing a highly efficient stress transfer mechanism for creating a corresponding strain in the channel region.
(FR)Selon l'invention, la suppression d'un espaceur extérieur 109, utilisé pour la formation de profils de dopants latéraux très complexes, avant la formation de siliciure métallique, permet d'obtenir un degré élevé de compatibilité avec les procédés classiques. Simultanément, une couche de revêtement de contact 115 peut être disposée plus près de la région des canaux, ce qui permet d'obtenir un mécanisme de transfert de contrainte très efficace afin de créer un effort correspondant dans la région des canaux.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)