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1. (WO2006118312) LASER IRRADIATION APPARATUS AND LASER IRRADIATION METHOD
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CLAIMS

1. A laser irradiation apparatus comprising:
a laser oscillator;
a beam homogenizer for homogenizing intensity distribution of a laser beam emitted from the laser oscillator;
a slit for blocking an end portion of the laser beam having passed through the beam homogenizer;
a projecting lens for projecting an image of the slit onto an irradiation surface; and
a condensing lens for condensing the image of the slit on the irradiation surface.

2. The laser irradiation apparatus according to Claim 1,
wherein the beam homogenizer is a diffractive optical element.

3. The laser irradiation apparatus according to Claim 1 or 2,
wherein the projecting lens is a convex cylindrical lens or a convex spherical lens.

4. The laser irradiation apparatus according to any one of Claims 1 to 3,
wherein the condensing lens is a convex cylindrical lens or a convex spherical lens.

5. The laser irradiation apparatus according to any one of Claims 1 to 4,
wherein 1/f = (IM1) + (IM2) and di : d2 = a : b are satisfied
(a is a width of an opening portion of the slit, b is a length of a major axis of the laser beam on the irradiation surface, f is a focal length of the projecting lens, di is a distance from a surface of the slit on an emission side to a .first principal point of the projecting lens, and d2 is a distance from a second principal point of the projecting lens to the irradiation surface.)

6. The laser irradiation apparatus according to any one of Claims 1 to 5,
wherein the laser beam is a continuous wave laser beam or a pulsed laser beam with a repetition rate of 10 MHz or higher.

7. The laser irradiation apparatus according to Claim 6,
wherein the laser beam emitted from the laser oscillator is selected from the group consisting of a Ti: sapphire laser, an Ar ion laser, and a laser using an optical fiber where said optical fiber is doped with one or more selected from Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a medium.

8. The laser irradiation apparatus according to Claim 6,
wherein the laser beam emitted from the laser oscillator is a laser using a material selected from the group consisting of a single-crystal YAQ a single-crystal

YV04, a single-crystal forsterite, a single-crystal YA103, a single-crystal GdVO4, a polycrystalline YAQ a polycrystalline Y2O3, a polycrystalline YV04, a polycrystalline

YA103, a polycrystalline GdVO4.

9. The laser irradiation apparatus according to any one of Claim 6 to 8,
wherein the laser beam is a higher harmonic converted by a non-linear optical element.

10. The laser irradiation apparatus according to any one of Claims 1 to 9,
wherein a opening portion of the slit is adjusted by moving a blocking plate.

11. The laser irradiation apparatus according to any one of Claims 1 to 10, wherein an image at the slit and an image on the irradiation surface are in a conjugated relation by the condensing lens.

12. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film over a substrate;
emitting a first laser beam from a laser oscillator
producing the first laser beam into a second laser beam by passing through a beam homogenizer;
producing the second laser beam into a third laser beam by passing through a slit;
producing the third laser beam into a fourth laser beam by passing through a projecting lens;
producing the fourth laser beam into a fifth laser beam by passing through a condensing lens; and
irradiating the semiconductor film with the fifth laser beam.

13. The method for manufacturing a semiconductor device according to Claim 12,
wherein 1/f = (IM1) + (l/d2) and dj. : ά% = a : b are satisfied
(a is a width of an opening portion of the slit, b is a length of a major axis of the laser beam on the irradiation surface, f is a focal length of the projecting lens, di is a distance from a surface of the slit on an emission side to a first principal point of the projecting lens, and d2 is a distance from a second principal point of the projecting lens to the irradiation surface.)

14. The method for manufacturing a semiconductor device according to Claim 12 or 13,
wherein the beam homogenizer is a diffractive optical element.

15. The method for manufacturing a semiconductor device according to any one of Claims 12 to 14,
, wherein the projecting lens is a convex cylindrical lens or a convex spherical lens.

16. The method for manufacturing a semiconductor device according to any one of Claims 12 to 15,
wherein the condensing lens is a convex cylindrical lens or a convex spherical lens.

17. The method for manufacturing a semiconductor device according to any one of Claims 12 to 16,
wherein the laser beam is a continuous wave laser beam or a pulsed laser beam with a repetition rate of 10 MHz or higher.

18. The method for manufacturing a semiconductor device according to any one of Claims 12 to 16,
wherein the first laser beam emitted from the laser oscillator is selected from the group consisting of a Thsapphire laser, an Ar ion laser, and a laser using an optical fiber where said optical fiber is doped with one or more selected from Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a medium.

19. The method for manufacturing a semiconductor device according to any one of Claims 12 to 16,
wherein the first laser beam emitted from the laser oscillator is a laser using a material selected from the group consisting of a single-crystal YAG, a single-crystal

YV04, a single-crystal forsterite, a single-crystal YA103, a single-crystal GdVO4, a polycrystalline YAG, a polycrystalline Y2O3, a polycrystalline YV04, a polycrystalline YA103, a polycrystalline GdVO4.

20. The method for manufacturing a semiconductor device according to any one of Claims 12 to 19,
wherein a opening portion of the slit is adjusted by moving a blocking plate.

21. The method for manufacturing a semiconductor device according to any one of Claims 12 to 20,
wherein an image at the slit and an image on the irradiation surface are in a conjugated relation by the condensing lens.

22. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film over a substrate;
emitting a first laser beam from a laser oscillator
producing the first laser beam into a second laser beam by passing through a beam homogenizer;
producing the second laser beam into a third laser beam by passing through a slit;
producing the third laser beam into a fourth laser beam by passing through a projecting lens;
producing the fourth laser beam into a fifth laser beam by passing through a condensing lens;
irradiating the semiconductor film with the fifth laser beam;
scanning the semiconductor film with the fifth laser beam to crystallize the semiconductor film; and
forming at least first and second semiconductor islands by patterning the crystallized semiconductor film.

23. The method for manufacturing a semiconductor device according to Claim 22,
wherein 1/f = (1/dχ) + (1/da) and di : d? = a : b are satisfied
(a is a width of an opening portion of the slit, b is a length of a major axis of the laser beam on the irradiation surface, f is a focal length of the projecting lens, di is a distance from a surface of the slit on an emission side to a first principal point of the projecting lens, and d2 is a distance from a second principal point of the projecting lens to the irradiation surface.)

24. The method for manufacturing a semiconductor device according to Claims 22 or 23,
wherein the condensing lens is two convex cylindrical lenses or a convex spherical lens.

25. The method for manufacturing a semiconductor device according to any one of Claims 22 to 24,
wherein the laser beam is a continuous wave laser beam.

26. The method for manufacturing a semiconductor device according to Claim 25,
wherein the first laser beam emitted from the laser oscillator is selected from the group consisting of a Tksapphire laser, an Ar ion laser, and a laser using an optical fiber where said optical fiber is doped with one or more selected from Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a medium.

27. The method for manufacturing a semiconductor device according to Claim 25,
wherein the first laser beam emitted from the laser oscillator is a laser using a material selected from the group consisting of a single-crystal YAQ a single-crystal YV04, a single-crystal forsterite, a single-crystal YA103, a single-crystal GdVO4, a polycrystalline YAQ a polycrystalline Y2O3, a polycrystalline YV04, a polycrystalline YA103, a polycrystalline GdVO4.

28. The method for manufacturing a semiconductor device according to any one of Claims 22 to 27,
wherein the laser beam has a pulse width of femtoseconds.

29. The method for manufacturing a semiconductor device according to Claim 28,
wherein the laser beam is emitted from a Tirsapphire laser, a chromium-forsterite laser, or a Yb:YAG laser.

30. The method for manufacturing a semiconductor device according to any one of Claims 22 to 29,
wherein the laser beam is a pulsed laser beam with a repetition rate of 10 MHz or more.

31. The method for manufacturing a semiconductor device according to any one of Claims 22 to 30,
wherein a width of a microcrystal region to a laser irradiation region formed by the irradiation ranges from 1 to 20 μm.

32. The method for manufacturing a semiconductor device according to any one of Claims 22 to 31,
wherein a opening portion of the slit is adjusted by moving a blocking plate.

33. The method for manufacturing a semiconductor device according to any one of Claims 22 to 32,
wherein an image at the slit and an image on the semiconductor film are in a conjugated relation by the condensing lens.