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1. (WO2006118108) EXPOSURE METHOD, EXPOSURE APPARATUS, METHOD FOR MANUFACTURING DEVICE, AND FILM EVALUATION METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/118108 International Application No.: PCT/JP2006/308648
Publication Date: 09.11.2006 International Filing Date: 25.04.2006
IPC:
H01L 21/027 (2006.01) ,G03F 7/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
長坂 博之 NAGASAKA, Hiroyuki [JP/JP]; JP (UsOnly)
株式会社ニコン NIKON CORPORATION [JP/JP]; 〒1008331 東京都千代田区丸の内3丁目2番3号 Tokyo 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1008331, JP (AllExceptUS)
Inventors:
長坂 博之 NAGASAKA, Hiroyuki; JP
Agent:
志賀 正武 SHIGA, Masatake; 〒1048453 東京都中央区八重洲2丁目3番1号 Tokyo 2-3-1, Yaesu, Chuo-ku, Tokyo 1048453, JP
Priority Data:
2005-12951727.04.2005JP
2005-21131921.07.2005JP
Title (EN) EXPOSURE METHOD, EXPOSURE APPARATUS, METHOD FOR MANUFACTURING DEVICE, AND FILM EVALUATION METHOD
(FR) PROCÉDÉ D’EXPOSITION, APPAREIL D’EXPOSITION, PROCÉDÉ DE FABRICATION DU DISPOSITIF, ET PROCÉDÉ D’ÉVALUATION DE LA PELLICULE
(JA) 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
Abstract:
(EN) Disclosed is an exposure method comprising a step for forming an immersion area (LR) of a liquid (LQ) on a substrate (P), a step for determining exposure conditions according to adhesion force acting between the surface of the substrate (P) and the liquid (LQ), and a step for exposing the substrate (P) to light through the liquid (LQ) in the immersion area (LR) according to the determined exposure conditions.
(FR) La présente invention concerne un procédé d’exposition comprenant une étape de formation d’une zone d’immersion (LR) d’un liquide (LQ) sur un substrat (P), une étape de détermination des conditions d'exposition en fonction de la force d'adhésion agissant entre la surface du substrat (P) et le liquide (LQ), et une étape d’exposition du substrat (P) à la lumière à travers le liquide (LQ) dans la zone d'immersion (LR) en fonction des conditions d'exposition déterminées.
(JA)  露光方法は、基板(P)上に液体(LQ)の液浸領域(LR)を形成する工程と、基板(P)の表面と液体(LQ)との間に作用する付着力に応じて露光条件を決定する工程と、露光条件に基づいて液浸領域(LR)の液体(LQ)を介して基板(P)を露光する工程と、を有する。
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)