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1. WO2006117389 - DISLOCATION-BASED LIGHT EMITTER

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Publication Number WO/2006/117389
Publication Date 09.11.2006
International Application No. PCT/EP2006/062030
International Filing Date 03.05.2006
IPC
H01L 33/16 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/34 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
34containing only elements of group IV of the periodic system
CPC
H01L 33/16
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
16with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
H01L 33/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
34containing only elements of group IV of the periodic system
H01S 5/3224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
3223IV compounds
3224Si
H01S 5/3227
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
3223IV compounds
3224Si
3227porous Si
Applicants
  • IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK [DE]/[DE] (AllExceptUS)
  • KITTLER, Martin [DE]/[DE] (UsOnly)
  • REICHE, Manfred [DE]/[DE] (UsOnly)
  • ARGUIROV, Tzanimir [BG]/[DE] (UsOnly)
  • SEIFERT, Winfried [DE]/[DE] (UsOnly)
Inventors
  • KITTLER, Martin
  • REICHE, Manfred
  • ARGUIROV, Tzanimir
  • SEIFERT, Winfried
Agents
  • EISENFÜHR, SPEISER & PARTNER
Priority Data
10 2005 021 296.403.05.2005DE
10 2006 008 025.416.02.2006DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERSETZUNGSBASIERTER LICHTEMITTER
(EN) DISLOCATION-BASED LIGHT EMITTER
(FR) EMETTEUR DE LUMIERE BASE SUR UNE DISLOCATION
front page image
Abstract
(DE)
Licht emittierendes Halbleiterbauelement mit einem Substrat, das eine erste Grenzfläche zwieschen einer ersten und einer zweiten Siliziumschicht aufweist, deren als ideal gedachte Gittestrukturen relativ zueinender um eine senkrecht zur Substratoberfläche stehende erste Achse (118) um einen Drehwinkel verdreht und um eine zweite parallel zur Substratoberfläche liegende Achse (110) um einen Kippwinkel verkippt sind, derart, dass im Bereich der Grenzfläche ein Versetzungsnetzwerk vorliegt, wobei der Drehwinkel und der Kippwinkel so gewählt sind, dass ein Elektrolumineszenspektrum des Halbleiterbauelement ein absolutes Maximum der emittierten Lichtintensität bei entweder 1,3 Mikrometern Lichtwellenlänge oder 1,55 Mikrometern Lichtwellenlänge aufweist.
(EN)
The invention relates to a light-emitting semiconductor component comprising a substrate provided with a first interface arranged between first and second silicon layers whose lattice structures considered as ideal are oriented to each other at an angle of rotation about a first axis (118) perpendicular to the substrate surface and are inclined at a tilting angle about a second axis (110) parallel thereto in such a way that a dislocation network is available in the interface area, wherein the rotation and tilting angles are selected in such a way that the electroluminescent spectrum of the semiconductor component exhibits an absolute maximum of the light intensity emitted at 1.3 or 1.55 light wavelength micrometers.
(FR)
L'invention concerne un composant semi-conducteur électroluminescent qui comprend un substrat présentant une première surface limite entre une première et une deuxième couche de silicium dont les structures de grille considérées comme idéales sont tournées l'une par rapport à l'autre d'un angle de rotation autour d'un premier axe (118) perpendiculaire à la surface du substrat et sont inclinées d'un angle d'inclinaison autour d'un deuxième axe (110) parallèle à la surface du substrat, de sorte qu'on a un réseau de dislocation dans la zone de la surface limite. L'angle de rotation et l'angle d'inclinaison sont sélectionnés de sorte qu'un spectre d'électroluminescence du composant semi-conducteur présente un maximum absolu de l'intensité lumineuse émise soit à 1,3 micromètre de longueur d'onde lumineuse soit à 1,55 micromètre de longueur d'onde lumineuse.
Also published as
DE102006008025
EP1880425
US20090321757
Latest bibliographic data on file with the International Bureau
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