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Machine translation
1. (WO2006116770) METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2006/116770    International Application No.:    PCT/US2006/016705
Publication Date: 02.11.2006 International Filing Date: 28.04.2006
Chapter 2 Demand Filed:    19.03.2007    
IPC:
H01L 21/302 (2006.01), H01L 21/461 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, Ct 06810 (US) (For All Designated States Except US).
LIU, Jun [CN/US]; (US) (For US Only).
KING, Mackenzie [CA/US]; (US) (For US Only).
DARSILLO, Michael [US/US]; (US) (For US Only).
BOGGS, Karl [US/US]; (US) (For US Only).
ROEDER, Jeffrey [US/US]; (US) (For US Only).
WRSCHKA, Peter [US/US]; (US) (For US Only).
BAUM, Thomas, H. [US/US]; (US) (For US Only)
Inventors: LIU, Jun; (US).
KING, Mackenzie; (US).
DARSILLO, Michael; (US).
BOGGS, Karl; (US).
ROEDER, Jeffrey; (US).
WRSCHKA, Peter; (US).
BAUM, Thomas, H.; (US)
Agent: FUIERER, Tristan, A.; Moore & Van Allen PLLC, Post Office Box 13706, Research Triangle Park, North Carolina 27709 (US)
Priority Data:
11/117,274 28.04.2005 US
11/117,282 28.04.2005 US
Title (EN) METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES
(FR) PROCEDE DE PASSIVATION DE COMPOSITIONS DE POLISSAGE CHIMICO-MECANIQUE UTILISEES DANS DES PROCESSUS DE PLANARISATION DE FILMS DE CUIVRE
Abstract: front page image
(EN)A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
(FR)L'invention porte sur un procédé de passivation d'une composition de polissage chimico-mécanique (CMP), par dilution et détermination de la relation entre le taux de dilution de la composition et la vitesse de mordançage du cuivre. Ce rapport peut servir à moduler la composition pendant le processus de polissage de manière à réduire le bosselage ou autres défauts de surface, et cela même en présence de niveaux élevés d'ions cuivre dans la composition de polissage et dans l'interface cuivre/composition.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)