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1. WO2006115857 - SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS

Publication Number WO/2006/115857
Publication Date 02.11.2006
International Application No. PCT/US2006/014226
International Filing Date 14.04.2006
IPC
H01L 21/332 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33the devices comprising three or more electrodes
332Thyristors
CPC
H01L 21/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/67207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67207comprising a chamber adapted to a particular process
H01L 21/67778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
67763the wafers being stored in a carrier, involving loading and unloading
67778involving loading and unloading of waers
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • YOKOTA, Yoshitaka [JP]/[US] (UsOnly)
  • MORITZ, Kirk [US]/[US] (UsOnly)
  • MA, Kai [CN]/[US] (UsOnly)
  • CHANG, Wen [US]/[US] (UsOnly)
  • PARASIRIS, Anastansios [US]/[US] (UsOnly)
  • SHARMA, Rohit [IN]/[US] (UsOnly)
  • TJANDRA, Agus [ID]/[US] (UsOnly)
  • ACHUTHARAMAN, Vendapuram [IN]/[US] (UsOnly)
  • RAMAMURTHY, Sundar [IN]/[US] (UsOnly)
  • THAKUR, Randhir [IN]/[US] (UsOnly)
Inventors
  • YOKOTA, Yoshitaka
  • MORITZ, Kirk
  • MA, Kai
  • CHANG, Wen
  • PARASIRIS, Anastansios
  • SHARMA, Rohit
  • TJANDRA, Agus
  • ACHUTHARAMAN, Vendapuram
  • RAMAMURTHY, Sundar
  • THAKUR, Randhir
Agents
  • GUENZER, Charles
Priority Data
11/114,25025.04.2005US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SUBSTRATE PROCESSING PLATFORM ALLOWING PROCESSING IN DIFFERENT AMBIENTS
(FR) PLATE-FORME DE TRAITEMENT DE SUBSTRATS PERMETTANT D'EFFECTUER LE TRAITEMENT DANS DES ENVIRONNEMENTS DIFFERENTS
Abstract
(EN) A semiconductor wafer processing system (40) including a factory interface (26) operating at atmospheric pressure and mounting plural wafer cassettes and further including plural wafer processing chambers (42, 44) mounted on a frame (16) and connected to the factory interface through respective slit valves. A robot in the factory interface can transfer wafers (32) between the cassettes and the processing chambers. At least one of the processing chambers can operate at reduced pressure and is pumped by a vacuum pump (46) mounted on the frame. The processing chamber may be a rapid thermal processing chamber (52) including an array of lamps (66) irradiating a processing volume (100) through a window (60). The lamphead is vacuum pumped to a pressure approximating that in the processing volume. A multi-step process may be performed with different pressures. The invention also includes a wafer access port (202) of a thermal processing chamber which can flow (210) an inert gas in outside of the slit valve to thereby form a gas curtain outside of the opened slit (206) to prevent the out flow of toxic processing gases.
(FR) La présente invention concerne un système (40) de traitement de tranches semi-conductrices comprenant une interface usine (26) fonctionnant à la pression atmosphérique et supportant plusieurs cassettes de tranches et comportant plusieurs chambres de traitement (42, 44) installées sur un cadre (16) et reliées à l'interface usine par des soupapes à fente. Un robot présent dans l'interface usine peut transférer les tranches (32) entre les cassettes et les chambres de traitement. Au moins une des chambres de traitement peut fonctionner à pression réduite et peut être mise en dépression par une pompe à vide (46) installée sur le cadre. La chambre de traitement peut être une chambre de traitement (52) thermique rapide comprenant un réseau de lampes (66) qui irradient un volume de traitement (100) par une fenêtre (60). Le volume supérieur est mis en dépression par la pompe à vide jusqu'à une pression voisine de celle de la chambre de traitement. Un processus en plusieurs étapes peut être exécuté à des pressions différentes. Cette invention concerne également un port (202) d'accès aux tranches d'une chambre de traitement thermique qui peut laisser s'écouler un gaz inerte dans un côté externe de la soupape à fente pour former ainsi un rideau de gaz à l'extérieur de la fente ouverte (206) qui empêche la sortie des gaz de traitement toxiques.
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EP6750298This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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