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1. WO2006115077 - MATERIAL FOR PROTECTIVE FILM FORMATION AND METHOD OF FORMING RESIST PATTERN THEREWITH

Publication Number WO/2006/115077
Publication Date 02.11.2006
International Application No. PCT/JP2006/307864
International Filing Date 13.04.2006
IPC
G03F 7/11 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/2041
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2041in the presence of a fluid, e.g. immersion; using fluid cooling means
Applicants
  • 東京応化工業株式会社 TOKYO OHKA KOGYO CO., LTD. [JP]/[JP] (AllExceptUS)
  • 石塚 啓太 ISHIDUKA, Keita [JP]/[JP] (UsOnly)
  • 遠藤 浩太朗 ENDO, Kotaro [JP]/[JP] (UsOnly)
Inventors
  • 石塚 啓太 ISHIDUKA, Keita
  • 遠藤 浩太朗 ENDO, Kotaro
Agents
  • 正林 真之 SHOBAYASHI, Masayuki
Priority Data
2005-12670325.04.2005JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIAL FOR PROTECTIVE FILM FORMATION AND METHOD OF FORMING RESIST PATTERN THEREWITH
(FR) MATÉRIAU DE FORMATION DE FILM DE PROTECTION ET MATÉRIAU DE FORMATION DE MOTIF DE RÉSIST AVEC CELUI-CI
(JA) 保護膜形成用材料およびこれを用いたレジストパターン形成方法
Abstract
(EN) A material for protective film formation that is used to form an upper-layer protective film for a resist film and that contains at least a polymer component soluble in water or alkali and an alcohol containing a fluorine atom; and a method of forming a resist pattern with the use of the same. Consequently, not only can the degeneration of resist film during liquid immersion exposure by various liquids for liquid immersion exposure, for example, water and the degeneration of liquid immersion exposure liquids per se be simultaneously prevented in the liquid immersion exposure process, but also without inviting an increase of the number of processing steps, the resistance to post exposure delay of the resist film can be enhanced.
(FR) L’invention concerne un matériau de formation de film de protection servant à constituer un film de protection de couche supérieure pour film résist et contenant au moins un composant polymère soluble dans l’eau ou un liquide alcalin et un alcool contenant un atome de fluor ; et un procédé de formation d’un motif de résist utilisant ledit matériau. En conséquence, l’invention permet non seulement d’empêcher toute dégénération de film de résist pendant l’exposition au liquide d’immersion par divers liquides pour exposition au liquide d’immersion, par exemple de l’eau, et toute dégénération de liquide d’exposition au liquide d’immersion en soi de manière simultanée lors du procédé d’exposition au liquide d’immersion, mais permet également d’éviter l’augmentation du nombre de phases de traitement, et d’améliorer la résistance à la temporisation post-exposition du film de résist.
(JA)  レジスト膜の上層保護膜を形成するための保護膜形成用材料であって、水またはアルカリに可溶性のポリマー成分、およびフッ素原子含有アルコールを少なくとも含有する材料、およびこれを用いたレジストパターン形成方法を提供する。これらにより、液浸露光プロセスにおいて、水を始めとした各種液浸露光用液体による液浸露光中のレジスト膜の変質および液浸露光用液体自体の変質を同時に防止し、かつ処理工程数の増加をきたすことなく、レジスト膜の引き置き耐性を向上させることができる。
Related patent documents
EP6731800This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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