Processing

Please wait...

Settings

Settings

Goto Application

1. WO2006114883 - SEMICONDUCTOR DEVICE

Publication Number WO/2006/114883
Publication Date 02.11.2006
International Application No. PCT/JP2005/007692
International Filing Date 22.04.2005
Chapter 2 Demand Filed 25.04.2005
IPC
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
CPC
H01L 2224/48247
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
481Disposition
48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
48221the body and the item being stacked
48245the item being metallic
48247connecting the wire to a bond pad of the item
H01L 2224/48472
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
484Connecting portions
4847the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
48472the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
H01L 27/0203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
H01L 27/0629
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0617comprising components of the field-effect type
0629in combination with diodes, or resistors, or capacitors
H01L 29/7815
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7815with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
H01L 2924/13091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
10Details of semiconductor or other solid state devices to be connected
11Device type
13Discrete devices, e.g. 3 terminal devices
1304Transistor
1306Field-effect transistor [FET]
13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Applicants
  • 株式会社ルネサステクノロジ RENESAS TECHNOLOGY CORP. [JP]/[JP] (AllExceptUS)
  • 藤城 敦 FUJIKI, Atsushi [JP]/[JP] (UsOnly)
  • 中洲 正敏 NAKASU, Masatoshi [JP]/[JP] (UsOnly)
Inventors
  • 藤城 敦 FUJIKI, Atsushi
  • 中洲 正敏 NAKASU, Masatoshi
Agents
  • 徳若光政 TOKUWAKA, Kousei
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
[PROBLEMS] To provide a semiconductor device provided with a two-terminal conducting element having a current limiting function. [MEANS FOR SOLVING PROBLEMS] In a power MOSFET, a drain is connected to a first terminal, and a source is connected to a second terminal. The power MOSFET is provided with a resistor means for connecting a gate with the drain, a current detecting means for detecting a current flowing in the power MOSFET, and a comparison circuit for comparing an output signal of the current detecting means with a reference signal. The current flowing in the power MOSFET is limited by a first MOSFET arranged between the gate and the source of the power MOSFET by receiving the output signal from the comparison circuit, and the first terminal and the second terminal are permitted to be an external first terminal and an external second terminal.
(FR)
La présente invention concerne un dispositif semi-conducteur équipé d'un élément conducteur à deux bornes présentant une fonction limitant le courant. Dans un MOSFET de puissance, le drain est connecté à une première borne, et la source est connectée à une seconde borne. Le MOSFET de puissance est équipé d’un moyen de résistance pour connecter la gâchette au drain, d'un moyen de détection du courant pour détecter le courant parcourant le MOSFET de puissance, et d'un circuit de comparaison pour comparer un signal de sortie du moyen de détection de courant avec un signal de référence. Le courant parcourant le MOFSET de puissance est limité par un premier MOFSET disposé entre la gâchette et la source du MOFSET de puissance en recevant le signal de sortie du circuit de comparaison, et la première borne et la seconde borne peuvent être une première borne externe et une seconde borne externe.
(JA)
【課題】 電流制限機能を持つ2端子通電素子を備えた半導体装置を提供する。 【解決手段】 ドレインが第1端子に接続され、ソースが第2端子に接続されたパワーMOSFETに対して、そのゲートとドレインとの間を接続する抵抗手段、かかるパワーMOSFETに流れる電流を検出する電流検出手段、上記電流検出手段の出力信号と基準信号とを比較する比較回路を設ける。上記比較回路の出力信号を受け、上記パワーMOSFETのゲートとソース間に設けられた第1MOSFETによりパワーMOSFETに流れる電流を制限し、上記第1端子と第2端子とを外部第1端子と外部第2端子とする。                                                                                                         
Also published as
EP5734578
Latest bibliographic data on file with the International Bureau