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1. (WO2006103582) WIDE EMITTING LENS FOR LED USEFUL FOR BACKLIGHTING
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2006/103582 International Application No.: PCT/IB2006/050820
Publication Date: 05.10.2006 International Filing Date: 16.03.2006
IPC:
H01L 33/60 (2010.01) ,H01L 33/58 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/54 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
Applicants:
KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL (BE)
PHILIPS LUMILEDS LIGHTING COMPANY, LLC [US/US]; 370 West Trimble Road San José, CA 95131, US (AllExceptUS)
Inventors:
SMITS, Willem, H.; US
Agent:
DAMEN, Daniël, Martijn; Philips Intellectual Property & Standards High Tech Campus 44 P.O. Box 220 NL-5600 AE Eindhoven, NL
Priority Data:
11/093,96129.03.2005US
Title (EN) WIDE EMITTING LENS FOR LED USEFUL FOR BACKLIGHTING
(FR) LENTILLES A EMISSION LARGE POUR LED CONVENANT POUR UN RETRO-ECLAIRAGE
Abstract:
(EN) Lenses and certain fabrication techniques are described. A wide-emitting lens refracts light emitted by an LED die to cause a peak intensity to occur within 50-80 degrees off the center axis and an intensity along the center axis to be between 5% and 33% of the peak intensity. The lens is particularly useful in a LCD backlighting application. In one embodiment, the lens is affixed to the back plane on which the LED die is mounted and surrounds the LED die. The lens has a hollow portion that forms an air gap between the LED die and the lens, where the light is bent towards the sides both at the air gap interface and the outer lens surface interface. The lens may be a secondary lens surrounding an interior lens molded directly over the LED die.
(FR) La présente invention concerne des lentilles et certaines techniques de fabrication. Une lentille à émissions larges réfracte la lumière émise par une puce DEL de façon à causer une intensité de crête survenant entre 50 et 80 degrés en dehors de l'axe central et une intensité le long de cet axe central comprise entre 5 % et 33 % de cette intensité de crête. Cette lentille convient particulièrement à une application de rétro-éclairage d'écran à cristaux liquides. Dans un mode de réalisation, la lentille est fixée sur un plan arrière sur lequel la puce DEL est montée et elle entoure cette puce DEL. La lentille possède d'une partie creuse qui forme un vide d'air entre la puce DEL et la lentille, où la lumière est incurvée vers les côtés au niveau de l'interface du vide d'air et de l'interface de la surface de la lentille extérieure. Cette lentille peut-être une lentille auxiliaire entourant une lentille intérieure moulée directement sur la puce DEL.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)