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1. WO2006101769 - METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM

Publication Number WO/2006/101769
Publication Date 28.09.2006
International Application No. PCT/US2006/008543
International Filing Date 09.03.2006
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
H01L 27/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
H01L 23/48 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
CPC
B23K 20/023
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
20Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
02by means of a press ; ; Diffusion bonding
023Thermo-compression bonding
B81B 2203/0315
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
03Static structures
0315Cavities
B81B 2207/012
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
01comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
012the micromechanical device and the control or processing electronics being separate parts in the same package
B81B 2207/094
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2207Microstructural systems or auxiliary parts thereof
09Packages
091Arrangements for connecting external electrical signals to mechanical structures inside the package
094Feed-through, via
B81B 3/0018
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
B81B 7/007
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems; ; Auxiliary parts of microstructural devices or systems
0032Packages or encapsulation
007Interconnections between the MEMS and external electrical signals
Applicants
  • INVESENSE INC. [US]/[US] (AllExceptUS)
  • NASIRI, Steven, S. [US]/[US] (UsOnly)
  • FLANNERY, Anthony, Francis, Jr. [US]/[US] (UsOnly)
Inventors
  • NASIRI, Steven, S.
  • FLANNERY, Anthony, Francis, Jr.
Agents
  • SAWYER, Joseph, A.
Priority Data
11/084,29618.03.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM
(FR) PROCEDE DE FABRICATION D'UNE LIAISON AL/GE DANS UN ENVIRONNEMENT D'EMBALLAGE DE TRANCHES ET PRODUIT FABRIQUE A PARTIR DE CE PROCEDE
Abstract
(EN)
A method of bonding between a first MEMS substrate (102) including at least one pattern substantially germanium layer and a secon CMOS substrate (104) including at least one patterned substantially aluminum layer through an aluminum-germanium bond (110) to create a robust electrical and mechanical contact.
(FR)
L'invention concerne un procédé destiné à lier du germanium à de l'aluminium entre deux substrats afin de créer un contact électrique et mécanique robuste. Une liaison aluminium-germanium présente la combinaison unique suivante de propriétés: (1) elle peut former un joint hermétique; (2) elle peut être utilisée pour créer un passage électroconducteur entre deux substrats; (3) elle peut être formée de sorte que ce passage conducteur soit localisé; et (4) elle peut être constituée d'un aluminium utilisable dans un procédé de fonderie CMOS standard. Cela présente l'important avantage de permettre l'encapsulation ou la liaison sur tranche sans addition de couches de traitement additionnelles à la tranche CMOS.
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