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1. WO2006101646 - METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE

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[ EN ]

WHAT IS CLAIMED IS:
1. A method for forming a ruthenium metal layer, comprising:
providing a patterned substrate in a process chamber of a deposition system, wherein the patterned substrate comprises one or more vias or trenches, or combinations thereof;
depositing a first ruthenium metal layer on the substrate in an atomic layer deposition process; and
depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process.

2. The method according to claim 1 , wherein the depositing a first ruthenium metal layer comprises a plasma-enhanced atomic layer deposition process.

3. The method according to claim 2, wherein the plasma-enhanced atomic layer deposition process comprises the alternating steps of:
first, exposing the substrate to a ruthenium organometallic precursor; and second, exposing the substrate to a plasma containing a hydrogen-containing gas comprising H2, NH3, or a combination thereof.

4. The method according to claim 3, further comprising:
purging the process chamber with an inert gas between the alternating exposure steps.

5. The method according to claim 3, wherein the first and second alternating exposure steps are performed a desired number of times to deposit the first ruthenium metal layer to a thickness of about 1-10 nm.

6. The method according to claim 1 , wherein the depositing a first ruthenium metal layer comprises a thermal atomic layer deposition process.

7. The method according to claim 6, wherein the thermal atomic layer deposition process comprises the alternating steps of: first, exposing the substrate to a ruthenium organometallic precursor; and second, exposing the substrate to a hydrogen-containing gas containing H2 or NH3, or a combination thereof.

8. The method according to claim 7, further comprising:
purging the process chamber with an inert gas between the alternating exposure steps.

9. The method according to claim 6, wherein the first and second alternating exposure steps are performed a desired number of times to deposit the first ruthenium metal layer to a thickness of about 1-10 nm.

10. The method according to claim 1 , wherein the depositing a second ruthenium metal layer comprises:
concurrently exposing the substrate to a ruthenium organometallic precursor and a reducing gas.

11. The method according to claim 1 , wherein the thickness of the second ruthenium metal layer is greater than the thickness of the first ruthenium metal layer.

12. The method according to claim 1 , wherein the first and second ruthenium metal layers are deposited from a ruthenium organometallic precursor comprising at least one of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl) ruthenium, bis(2,4-dimethylpentadienyl) ruthenium, 2,4-dimethylpentadienyl) (methylcyclopentadienyl) ruthenium, or bis(ethylcyclopentadienyl) ruthenium, or a combination thereof.

13. The method according to claim 1 , further comprising:
maintaining the substrate at a temperature between about 50°C and about 500°C during the depositing of the first and second ruthenium metal layers.

14. The method according to claim 1 , further comprising:
maintaining the substrate at a temperature between about 200°C and about 300°C during the depositing of the first and second ruthenium metal layers.

15. The method according to claim 1 , further comprising:
maintaining the substrate at a first temperature during the depositing of the first ruthenium metal layer; and
maintaining the substrate at a second temperature during the depositing of the second ruthenium metal layer, wherein the second temperature is greater than the first temperature.

16. The method according to claim 1 , further comprising:
maintaining the process chamber at a first pressure during the depositing of the first ruthenium metal layer; and
maintaining the process chamber at a second pressure during the depositing of the second ruthenium metal layer, wherein the second pressure is greater than the first pressure.

17. The method according to claim 16, wherein the first pressure is between about 5 mTorr and about 500 mTorr and the second pressure is between about 500 mTorr and about 30 Torr.

18. The method according to claim 1 , wherein the patterned substrate further comprises a tantalum-containing or a tungsten-containing barrier layer formed thereon onto which the first ruthenium metal layer is deposited.

19. A method for forming a ruthenium metal layer, comprising:
providing a patterned substrate in a process chamber of a deposition system, wherein the patterned substrate contains one or more vias or trenches, or combinations thereof;
depositing a first ruthenium metal layer on the substrate in a plasma-enhanced atomic layer deposition process including alternating exposures of the substrate to a) a ruthenium organometallic precursor and b) a hydrogen-containing gas in a plasma; and
depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process by exposing the substrate concurrently to a ruthenium organometallic precursor and a hydrogen-containing gas.

20. A method for forming a ruthenium metal layer, comprising:
providing a patterned substrate in a process chamber of a deposition system, wherein the patterned substrate contains one or more vias or trenches, or combinations thereof;
depositing a first ruthenium metal layer on the substrate in an atomic layer deposition process, wherein the atomic layer deposition process comprises a thermal atomic layer deposition process including alternating exposures of the substrate by a) a ruthenium organometallic precursor and b) a hydrogen-containing gas; and
depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process by exposing the substrate concurrently to a ruthenium organometallic precursor and a hydrogen-containing gas.

21. A computer readable medium containing program instructions for execution on a processor, which when executed by the processor, cause a deposition system to perform the steps in the method recited in claim 1.