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1. WO2006101086 - EXPOSURE APPARATUS, EXPOSURE METHOD AND METHOD FOR MANUFACTURING MICRODEVICE

Publication Number WO/2006/101086
Publication Date 28.09.2006
International Application No. PCT/JP2006/305579
International Filing Date 20.03.2006
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/70275
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70275Multiple projection paths, array of projection systems, microlens projection systems, tandem projection systems
G03F 7/70358
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70216Systems for imaging mask onto workpiece
70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
G03F 7/70791
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70691Handling of masks or wafers
70791Large workpieces, e.g. in the shape of web or polygon
G03F 9/7088
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Applicants
  • 株式会社ニコン NIKON CORPORATION [JP]/[JP] (AllExceptUS)
  • 柳原 政光 YANAGIHARA, Masamitsu [JP]/[JP] (UsOnly)
  • 小板橋 英樹 KOITABASHI, Hideki [JP]/[JP] (UsOnly)
Inventors
  • 柳原 政光 YANAGIHARA, Masamitsu
  • 小板橋 英樹 KOITABASHI, Hideki
Agents
  • 藤本 芳洋 FUJIMOTO, Yoshihiro
Priority Data
2005-08148122.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EXPOSURE APPARATUS, EXPOSURE METHOD AND METHOD FOR MANUFACTURING MICRODEVICE
(FR) DISPOSITIF D'EXPOSITION, PROCEDE D'EXPOSITION ET PROCEDE DE FABRICATION DE MICRODISPOSITIF
(JA) 露光装置、露光方法及びマイクロデバイスの製造方法
Abstract
(EN)
In an exposure apparatus, a mask stage (MST) for placing a mask (M) and a substrate stage (PST) for placing a photosensitive substrate (P) are synchronously moved relatively to projection optical systems (PL1-PL11), and scanning exposure of a pattern of the mask (M) is performed to the photosensitive substrate (P). A position of the substrate stage (PST) to the projection optical systems (PL1-PL11) at the time of detecting alignment marks (a19-a24) arranged on the photosensitive substrate (P) substantially matches with a position of the substrate stage (PST) to the projection optical systems (PL1-PL11) at the time of starting the scanning exposure.
(FR)
La présente invention concerne un dispositif d’exposition comprenant un étage de masque (MST) pour le placement d’un masque (M) et un étage de substrat (PST) pour le placement d’un substrat photosensible (P), les masques faisant l’objet d’un déplacement synchronisé par rapport à des systèmes optiques de projection (PL1-PL11) et l’exposition par balayage d’un motif du masque (M) s’effectuant sur le substrat photosensible (P). Une position de l’étage de substrat (PST) par rapport aux systèmes optiques de projection (PL1-PL11) lors de la détection des marques d’alignement (a19-a24) disposées sur le substrat photosensible (P) correspond sensiblement à une position similaire au début de l’exposition par balayage.
(JA)
 マスクMを載置するマスクステージMSTと感光性基板Pを載置する基板ステージPSTとを投影光学系PL1~PL11に対して相対的に同期移動させて、前記感光性基板P上に前記マスクMのパターンをスキャン露光する露光装置において、前記感光性基板P上に設けられたアライメントマークa19~a24を検出する際の前記投影光学系PL1~PL11に対する前記基板ステージPSTの位置と、前記スキャン露光を開始する際の前記投影光学系PL1~PL11に対する前記基板ステージPSTの位置とは、略一致する。
Also published as
EP6729547
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