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1. WO2006101027 - PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE

Publication Number WO/2006/101027
Publication Date 28.09.2006
International Application No. PCT/JP2006/305350
International Filing Date 17.03.2006
IPC
C09D 7/12 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
7Features of coating compositions, not provided for in group C09D5/88; Processes for incorporating ingredients in coating compositions
12Other additives
C09D 183/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C08K 3/02
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
KUse of inorganic or non-macromolecular organic substances as compounding ingredients
3Use of inorganic substances as compounding ingredients
02Elements
C09D 183/04
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
04Polysiloxanes
C09D 7/45
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
7Features of coating compositions, not provided for in group C09D5/00
40Additives
45Anti-settling agents
C09D 7/61
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
7Features of coating compositions, not provided for in group C09D5/00
40Additives
60non-macromolecular
61inorganic
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/02142
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02142the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP] (AllExceptUS)
  • 独立行政法人産業技術総合研究所 National Institute of Advanced Industrial Science and Technology [JP]/[JP] (AllExceptUS)
  • 三井化学株式会社 Mitsui Chemicals, Inc. [JP]/[JP] (AllExceptUS)
  • 藤井 宣年 FUJII, Nobutoshi [JP]/[JP] (UsOnly)
  • 中山 高博 NAKAYAMA, Takahiro [JP]/[JP] (UsOnly)
  • 金山 敏彦 KANAYAMA, Toshihiko [JP]/[JP] (UsOnly)
  • 高村 一夫 KOHMURA, Kazuo [JP]/[JP] (UsOnly)
  • 田中 博文 TANAKA, Hirofumi [JP]/[JP] (UsOnly)
Inventors
  • 藤井 宣年 FUJII, Nobutoshi
  • 中山 高博 NAKAYAMA, Takahiro
  • 金山 敏彦 KANAYAMA, Toshihiko
  • 高村 一夫 KOHMURA, Kazuo
  • 田中 博文 TANAKA, Hirofumi
Agents
  • 特許業務法人エクシオ Exeo Patent & Trademark Company
Priority Data
2005-08420623.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE PRECURSEUR POUR UNE MEMBRANE POREUSE ET PROCEDE POUR SA PREPARATION, MEMBRANE POREUSE ET PROCEDE POUR SA FABRICATION ET DISPOSITIF SEMI-CONDUCTEUR
(JA) 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
Abstract
(EN)
Disclosed is a precursor composition for a porous membrane comprising at least one compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula: Ra(Si)(OR2)4-a (wherein R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer of 1 to 3, provided that R, R1 and R2 may the same as or different from one another), a thermally decomposable organic compound which is thermally decomposed at a temperature of 250˚C or higher, an element having a catalytic effect and an organic solvent. A solution of the precursor composition can be subjected to the gas phase polymerization with a hydrophobic compound to produce a hydrophobic porous membrane having a low dielectric constant, a low refraction index and a high mechanical strength. Also disclosed is a semiconductor device having the porous membrane.
(FR)
La présente invention décrit une composition de précurseur pour une membrane poreuse comprenant au moins un composé sélectionné parmi un composé représenté par la formule : Si(OR1)4 et un composé représenté par la formule : Ra(Si)(OR2)4-a (dans laquelle R1 représente un groupe organique monovalent ; R représente un atome d’hydrogène, un atome de fluor ou un groupe organique monovalent ; R2 représente un groupe organique monovalent ; et a est un entier de 1 à 3, sous réserve que R, R1 et R2 peuvent être identiques ou différents les uns des autres), un composé organique thermiquement décomposable qui est thermiquement décomposé à une température de 250 °C ou plus, un élément ayant un effet catalytique et un solvant organique. Une solution de la composition de précurseur peut être soumise à la polymérisation en phase gazeuse avec un composé hydrophobe pour produire une membrane poreuse hydrophobe ayant une faible constante diélectrique, un faible indice de réfraction et une résistance mécanique élevée. L’invention décrit également un dispositif semi-conducteur comportant la membrane poreuse.
(JA)
式:Si(OR)及びR(Si)(OR)4-a(式中、Rは1価の有機基を表し、Rは水素原子、フッ素原子又は1価の有機基を表し、Rは1価の有機基を表し、aは1~3の整数であり、R、R及びRは同一であっても異なっていてもよい)で示される化合物から選ばれた少なくとも1種の化合物と、250°C以上で熱分解を示す熱分解性有機化合物と、触媒作用をなす元素と、有機溶媒とからなる多孔質膜の前駆体組成物。この前駆体組成物の溶液を用いて疎水性化合物と気相重合反応せしめ、低誘電率、低屈折率、高機械的強度を有する疎水性多孔質膜を作製する。この多孔質膜を用いた半導体装置。
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