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1. WO2006100956 - PROCESS FOR PRODUCING THIN NITRIDE FILM ON SAPPHIRE SUBSTRATE AND THIN NITRIDE FILM PRODUCING APPARATUS

Publication Number WO/2006/100956
Publication Date 28.09.2006
International Application No. PCT/JP2006/304942
International Filing Date 14.03.2006
IPC
C23C 16/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C30B 25/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
C30B 25/18
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 29/406
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
406Gallium nitride
H01L 21/0242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
0242Crystalline insulating materials
H01L 21/0254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02538Group 13/15 materials
0254Nitrides
Applicants
  • 独立行政法人科学技術振興機構 JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP]/[JP] (AllExceptUS)
  • 国立大学法人静岡大学 National University Corporation Shizuoka University [JP]/[JP] (AllExceptUS)
  • 角谷 正友 SUMIYA, Masatomo [JP]/[JP] (UsOnly)
  • 福家 俊郎 FUKE, Shunro [JP]/[JP] (UsOnly)
Inventors
  • 角谷 正友 SUMIYA, Masatomo
  • 福家 俊郎 FUKE, Shunro
Agents
  • 清水 守 SHIMIZU, Mamoru
Priority Data
2005-08426423.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PROCESS FOR PRODUCING THIN NITRIDE FILM ON SAPPHIRE SUBSTRATE AND THIN NITRIDE FILM PRODUCING APPARATUS
(FR) PROCÉDÉ DE PRODUCTION D'UNE FINE COUCHE DE NITRURE SUR UN SUBSTRAT DE SAPHIR ET DISPOSITIF DE PRODUCTION DE LA FINE COUCHE DE NITRURE
(JA) サファイア基板上への窒化物薄膜の製造方法及び窒化物薄膜装置
Abstract
(EN)
A process for producing a thin nitride film on a sapphire substrate, in which using no resists, miniaturization can be accomplished while relieving vexatious complication of the process; and a relevant thin nitride film producing apparatus. There is provided a process for producing a thin nitride film on a sapphire substrate, comprising irradiating a sapphire substrate having undergone high-temperature hydrogen treatment with electron beams and depositing a thin nitride film on the substrate having undergone the electron beam irradiation according to an organometallic chemical deposition technique to thereby accomplish portraying of thin nitride film.
(FR)
La présente invention concerne un procédé de production d’une fine couche de nitrure sur un substrat de saphir, excluant l’utilisation de réserve, la miniaturisation pouvant être accomplie tout en libérant la complication vexante du procédé ; et un dispositif de production de la fine couche de nitrure approprié. L’invention met à disposition un procédé pour produire une fine couche de nitrure sur un substrat de saphir, comprenant l’irradiation d’un substrat de saphir ayant été soumis à un traitement à l’hydrogène à haute température au moyen de faisceaux d'électrons et la déposition d'une fine couche de nitrure sur le substrat ayant subi l'irradiation du faisceau d'électrons selon une technique de déposition chimique organométallique, accomplissant ainsi la déposition de la fine couche de nitrure.
(JA)
 レジストを用いることなく、微細化を図り、しかもプロセスの煩雑さを改善した、サファイア基板上への窒化物薄膜の製造方法及び窒化物薄膜装置を提供する。 サファイア基板上への窒化物薄膜の製造方法において、高温水素処理を行ったサファイア基板に電子線を照射し、この電子線処理基板に有機金属化学堆積法によって窒化物薄膜を堆積し、窒化物薄膜を描画する。
Also published as
EP6729007
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