Processing

Please wait...

Settings

Settings

Goto Application

1. WO2006100949 - ALUMINUM PLATE FOR ALUMINUM ELECTROLYTIC CAPACITOR ELECTRODE, ALUMINUM ELECTROLYTIC CAPACITOR, AND PROCESS FOR PRODUCING ALUMINUM ELECTROLYTIC CAPACITOR

Publication Number WO/2006/100949
Publication Date 28.09.2006
International Application No. PCT/JP2006/304854
International Filing Date 13.03.2006
IPC
H01G 9/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes
C22C 21/00 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
21Alloys based on aluminium
C25D 11/04 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
C25F 3/04 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
04of light metals
H01G 9/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
H01G 9/042 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes
042characterised by the material
CPC
C25D 11/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
11Electrolytic coating by surface reaction, i.e. forming conversion layers
02Anodisation
04of aluminium or alloys based thereon
C25F 3/04
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3Electrolytic etching or polishing
02Etching
04of light metals
H01G 9/045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes ; or formation of dielectric layers thereon
042characterised by the material
045based on aluminium
H01G 9/055
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
9Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004Details
04Electrodes ; or formation of dielectric layers thereon
048characterised by their structure
055Etched foil electrodes
Applicants
  • 日本軽金属株式会社 NIPPON LIGHT METAL COMPANY, LTD. [JP]/[JP] (AllExceptUS)
  • 片野 雅彦 KATANO, Masahiko [JP]/[JP] (UsOnly)
  • 磯部 昌司 ISOBE, Masashi [JP]/[JP] (UsOnly)
  • 新井 慎一 ARAI, Shinichi [JP]/[JP] (UsOnly)
Inventors
  • 片野 雅彦 KATANO, Masahiko
  • 磯部 昌司 ISOBE, Masashi
  • 新井 慎一 ARAI, Shinichi
Agents
  • 横沢 志郎 YOKOZAWA, Shiro
Priority Data
2005-08410823.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ALUMINUM PLATE FOR ALUMINUM ELECTROLYTIC CAPACITOR ELECTRODE, ALUMINUM ELECTROLYTIC CAPACITOR, AND PROCESS FOR PRODUCING ALUMINUM ELECTROLYTIC CAPACITOR
(FR) PLAQUE D'ALUMINIUM POUR ELECTRODE DE CONDENSATEUR ELECTROLYTIQUE A ALUMINIUM, CONDENSATEUR ELECTROLYTIQUE A ALUMINIUM ET SON PROCEDE DE PRODUCTION
(JA) アルミニウム電解コンデンサ電極用アルミニウム板、アルミニウム電解コンデンサ、およびアルミニウム電解コンデンサの製造方法
Abstract
(EN)
An aluminum plate (1) having an aluminum purity of not less than 99.98% by mass and an Fe content of 5 to 50 ppm with the balance consisting of unavoidable impurities is used to realize increased capacitance of an aluminum electrolytic capacitor, reduced height, and improved high frequency characteristics. In this aluminum plate (1), the total content of Fe in crystal/precipitate is 1 to 50% based on the original content, and the thickness of the aluminum plate is 0.2 to 1 mm. In the formation of a capacitor anode, the aluminum plate (1) is subjected to alternate current etching so as to leave a core part (2) having an average thickness of 50 to 150 μm in the center part in the thickness-wise direction to increase the surface area, followed by anodic oxidation.
(FR)
La présente invention concerne une plaque d'aluminium (1) dont la teneur en aluminium n'est pas inférieure à 99,98 % de sa masse et la teneur en fer comprise entre 5 et 50 ppm, le solde consistant en des impuretés inévitables, ladite plaque servant à augmenter la capacité d'un condensateur électrolytique à aluminium, à réduire sa hauteur et à améliorer ses caractéristiques haute fréquence. La teneur totale en fer de cette plaque d'aluminium (1) sous forme de cristal/précipité est de 1 à 50 % selon la teneur d'origine et son épaisseur est de 0,2 à 1 mm. Dans la formation d'une anode de condensateur, la plaque d'aluminium (1) est soumise à une attaque par courant alternatif de sorte à conserver un cœur (2) ayant une épaisseur moyenne comprise entre 50 et 150 µm au centre dans le sens de l'épaisseur pour augmenter la surface de contact, puis à une oxydation anodique.
(JA)
 アルミニウム電解コンデンサの高容量化、低背化、高周波特性の向上を図ることを目的に、アルミニウム純度が99.98質量%以上、Fe含有量が5~50ppm、および残部が不可避的不純物からなるアルミニウム板(1)を用いる。このアルミニウム板(1)は、晶出・析出物中のFeの合計量が元含有量の1~50%、厚さが0.2~1mmである。コンデンサ陽極を形成する際には、厚さ方向の中心部分に平均厚さが50~150μmの芯部(2)を残すようにアルミニウム板(1)を交流エッチングして表面積を拡大した後、陽極酸化する。
Latest bibliographic data on file with the International Bureau