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1. WO2006098501 - SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Publication Number WO/2006/098501
Publication Date 21.09.2006
International Application No. PCT/JP2006/305761
International Filing Date 16.03.2006
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
C01B 31/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 29/0665
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
H01L 29/0673
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0673oriented parallel to a substrate
H01L 29/0676
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
0676oriented perpendicular or at an angle to a substrate
H01L 29/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0665the shape of the body defining a nanostructure
0669Nanowires or nanotubes
068comprising a junction
H01L 29/78642
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78642Vertical transistors
Applicants
  • 国立大学法人徳島大学 THE UNIVERSITY OF TOKUSHIMA [JP]/[JP] (AllExceptUS)
  • 赤松 則男 AKAMATSU, Norio [JP]/[JP] (UsOnly)
Inventors
  • 赤松 則男 AKAMATSU, Norio
Agents
  • 鈴木 正剛 SUZUKI, Seigoh
Priority Data
2005-07762517.03.2005JP
2005-07762617.03.2005JP
2005-07762717.03.2005JP
2005-07762817.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
(FR) DISPOSITIF SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTRONIQUE
(JA) 半導体装置及び電子装置
Abstract
(EN)
There is provided a semiconductor device including a nanotube (1) having a first semiconductor characteristic, a pair of electrodes (6, 7) having a second semiconductor characteristic different from the first semiconductor and arranged at both ends of the nanotube (1), and a first and a second conductor (2, 3) opposing to sandwich the nanotube (1). When voltage of a predetermined value is applied to each of the first and the second conductor (2, 3), an electric field E is generated in the direction vertical to the axial line of the nanotube and a channel is formed between the pair of electrodes (6, 7).
(FR)
La présente invention concerne un dispositif semi-conducteur comportant un nanotube (1) possédant une première caractéristique de semi-conducteur, une paire d’électrodes (6, 7) possédant une seconde caractéristique de semi-conducteur différente de celle du premier et disposées à chaque extrémité du nanotube (1), et un premier et un second conducteurs (2, 3) se faisant face de part et d’autre du nanotube (1). Lorsqu’une tension d’une valeur prédéterminée est appliquée au premier aussi bien qu’au second conducteur (2, 3), un champ électrique E est généré verticalement en direction de l’axe du nanotube et un canal se forme entre la paire d’électrodes (6, 7).
(JA)
 第1の半導体の特性を有するナノチューブ1と、第1の半導体と異なる第2の半導体の特性を有し、ナノチューブ1の両端に設けられる一対の電極6、7と、ナノチューブ1を挟んで対向する第1導体2及び第2導体3と、を備えた半導体装置である。第1導体2及び第2導体3の各々に所定値の電圧が印加されたときに、ナノチューブの軸線に垂直の方向に電界Eが発生して、一対の電極6、7間にチャネルが形成されるようになっている。
Also published as
EP6729728
Latest bibliographic data on file with the International Bureau