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1. WO2006098316 - METHOD FOR THIN FILM FORMATION

Publication Number WO/2006/098316
Publication Date 21.09.2006
International Application No. PCT/JP2006/305013
International Filing Date 14.03.2006
IPC
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C23C 16/401
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
C23C 16/402
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
401containing silicon
402Silicon dioxide
C23C 16/452
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452by activating reactive gas streams before ; their; introduction into the reaction chamber, e.g. by ; ionisation; or addition of reactive species
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02211the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
Applicants
  • 日本電気株式会社 NEC CORPORATION [JP]/[JP] (AllExceptUS)
  • 野上裕 NOGAMI, Hiroshi [JP]/[JP] (UsOnly)
  • 湯田克久 YUDA, Katsuhisa [JP]/[JP] (UsOnly)
  • 田邊浩 TANABE, Hiroshi [JP]/[JP] (UsOnly)
Inventors
  • 野上裕 NOGAMI, Hiroshi
  • 湯田克久 YUDA, Katsuhisa
  • 田邊浩 TANABE, Hiroshi
Agents
  • 鈴木正次 SUZUKI, Shoji
Priority Data
2005-07321715.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR THIN FILM FORMATION
(FR) PROCEDE DE FORMATION DE FILM MINCE
(JA) 薄膜形成方法
Abstract
(EN)
[PROBLEMS] To provide a method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density. [MEANS FOR SOLVING PROBLEMS] A method for thin film formation, comprising generating plasma within a vacuum vessel to generate an active species (radical) and forming a silicon oxide film on a silicon substrate using this active species and a material gas, wherein, in addition to the material gas, a nitrogen atom-containing gas is introduced into the vacuum vessel in its film forming space where the active species (radical) and the material gas come into contact with each other for the first time and are reacted with each other to form a silicon oxide film on the silicon substrate, and wherein the flow rate of the nitrogen atom-containing gas during the formation of the silicon oxide film on the silicon substrate is regulated so as to be the maximum value at least at the time of the start of formation of the silicon oxide film on the silicon substrate.
(FR)
Le problème à résoudre dans le cadre de cette invention consiste à trouver un procédé de formation de film mince capable de former à basse température un film mince possédant de bonnes propriétés d'interface entre un substrat en silicium et un film d'oxyde de silicium et présentant une faible densité de pièges d'interface. La solution proposée consiste en un procédé de formation de film mince qui comprend la génération d'un plasma à l'intérieur d'une enceinte à vide, afin de générer une espèce active (radical), et la formation d'un film d'oxyde de silicium sur un substrat en silicium en utilisant cette espèce active et un gaz matériel. Dans ce procédé, outre le gaz matériel, un gaz contenant des atomes d'azote est introduit dans l'enceinte à vide au niveau de l'espace de formation du film où l'espèce active (radical) et le gaz matériel entrent en contact pour la première fois et où ils réagissent l'un avec l'autre pour former un film d'oxyde de silicium sur le substrat en silicium, le débit du gaz contenant des atomes d'azote durant la formation du film d'oxyde de silicium sur le substrat en silicium étant réglé de manière à ce qu'il atteigne sa valeur maximale au moins au moment du début de la formation du film d'oxyde de silicium sur le substrat en silicium.
(JA)
【課題】低温で、シリコン基板とシリコン酸化膜との界面特性が良好であり、低界面トラップ密度の良質な薄膜を作製する薄膜形成方法を提案する。 【解決手段】真空容器内でプラズマを生成して活性種(ラジカル)を発生させ、この活性種と材料ガスでシリコン基板にシリコン酸化膜の成膜を行う薄膜形成方法であって、真空容器内で活性種(ラジカル)と材料ガスとが初めて接触し、両者の反応によりシリコン基板上へのシリコン酸化膜形成が行われる成膜処理空間へ、窒素原子を含むガスを前記材料ガス以外に導入することとし、シリコン基板へのシリコン酸化膜の成膜が行われている間における当該窒素原子を含むガスの流量を、少なくとも、シリコン基板へのシリコン酸化膜の成膜開始の時点において最大になるように調整する薄膜形成方法。
Also published as
EP6729047
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