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1. WO2006098260 - APPARATUS FOR FILM FORMATION AND METHOD FOR FILM FORMATION

Publication Number WO/2006/098260
Publication Date 21.09.2006
International Application No. PCT/JP2006/304872
International Filing Date 13.03.2006
IPC
C23C 16/452 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
CPC
C23C 16/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C23C 16/44
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
C23C 16/452
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
452by activating reactive gas streams before ; their; introduction into the reaction chamber, e.g. by ; ionisation; or addition of reactive species
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP] (AllExceptUS)
  • 五戸 成史 GONOHE, Narishi [JP]/[JP] (UsOnly)
  • 原田 雅通 HARADA, Masamichi [JP]/[JP] (UsOnly)
  • 加藤 伸幸 KATO, Nobuyuki [JP]/[JP] (UsOnly)
Inventors
  • 五戸 成史 GONOHE, Narishi
  • 原田 雅通 HARADA, Masamichi
  • 加藤 伸幸 KATO, Nobuyuki
Agents
  • 特許業務法人エクシオ Exeo Patent & Trademark Company
Priority Data
2005-07776417.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) APPARATUS FOR FILM FORMATION AND METHOD FOR FILM FORMATION
(FR) APPAREIL DE FORMATION DE FILM ET PROCÉDÉ DE FORMATION DE FILM
(JA) 成膜装置及び成膜方法
Abstract
(EN)
In a vacuum chamber (42) comprising a catalyst chamber (46) provided with a catalyst source (48) provided so as to face a film forming chamber (44) and a substrate (S), the film forming chamber (44) is connected to the catalyst chamber (46) through an opening part (47). The catalyst source is disposed at a position satisfying a requirement of &ohgr; ≥ &thetas; wherein &ohgr; represents the angle that a straight line, which shortestly connects the peripheral part of the substrate mounted within the film forming chamber to the peripheral part of the opening part, makes with the substrate; and &thetas; represents the angle that a straight line, which shortestly connects the peripheral part of the substrate to the edge part of the catalyst source makes with the substrate. The use of this film forming apparatus can realize the formation of a desired film while preventing deactivation of radicals generated in the catalyst source and thus efficiently carrying out a reaction of a starting gas with radicals.
(FR)
Dans une chambre de vide (42) comprenant une chambre catalytique (46) pourvue d’une source catalytique (48) devant faire face à une chambre de formation de film (44) et un substrat (S), la chambre de formation de film (44) est connectée à la chambre catalytique (46) à travers une partie ouverture (47). La source catalytique occupe une position satisfaisant à une exigence selon laquelle &ohgr; ≥ &thetas; où &ohgr; représente l’angle établi par une ligne droite, reliant la partie périphérique du substrat montée dans la chambre de formation de film à la partie périphérique de la partie ouverture en empruntant le chemin le plus court, avec le substrat ; et &thetas; représente l’angle établi par une ligne droite, reliant la partie périphérique du substrat à la partie du bord de la source catalytique, avec le substrat. L’utilisation de cet appareil de formation de film peut réaliser la formation d’un film désiré tout en empêchant la désactivation de radicaux générés dans la source catalytique et lançant ainsi de manière efficace une réaction d’un gaz de démarrage avec les radicaux.
(JA)
成膜室44及び基板Sに対向するよう設けられた触媒源48を備えた触媒室46からなる真空チャンバー42において、成膜室44と触媒室46とが開口部47を介して接続されており、成膜室内に載置される基板の周縁部と開口部の周縁部との最短距離を結ぶ直線が基板となす角度をωとし、基板の周縁部と触媒源の縁部との最短距離を結ぶ直線が基板となす角度をθとした場合に、触媒源が、ω≧θを満たす位置に配置されている。このような成膜装置を使用することにより触媒源で発生したラジカルの失活を防いで、原料ガスとラジカルとの反応を効率よく行って所望の膜を形成することができる。
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