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1. WO2006098237 - FILM FORMING APPARATUS AND FILM FORMING METHOD

Publication Number WO/2006/098237
Publication Date 21.09.2006
International Application No. PCT/JP2006/304726
International Filing Date 10.03.2006
IPC
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
C23C 16/4485
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4485by evaporation without using carrier gas in contact with the source material
C23C 16/45557
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45557Pulsed pressure or control pressure
H01L 21/02175
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
H01L 21/02183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02183the material containing tantalum, e.g. Ta2O5
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H01L 21/31604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
31604Deposition from a gas or vapour
Applicants
  • 学校法人同志社 THE DOSHISHA [JP]/[JP] (AllExceptUS)
  • 株式会社堀場製作所 HORIBA, Ltd. [JP]/[JP] (AllExceptUS)
  • 千田 二郎 SENDA, Jiro [JP]/[JP] (UsOnly)
  • 大嶋 元啓 OSHIMA, Motohiro [JP]/[JP] (UsOnly)
  • 石田 耕三 ISHIDA, Kozo [JP]/[JP] (UsOnly)
  • 富永 浩二 TOMINAGA, Koji [JP]/[JP] (UsOnly)
Inventors
  • 千田 二郎 SENDA, Jiro
  • 大嶋 元啓 OSHIMA, Motohiro
  • 石田 耕三 ISHIDA, Kozo
  • 富永 浩二 TOMINAGA, Koji
Agents
  • 西村 竜平 NISHIMURA, Ryuhei
Priority Data
2005-07583516.03.2005JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FILM FORMING APPARATUS AND FILM FORMING METHOD
(FR) APPAREIL ET PROCEDE DE FORMATION DE FILM
(JA) 成膜装置及び成膜方法
Abstract
(EN)
A metal oxide film or a metal nitride film having less oxygen vacancy is formed at a high speed with excellent repeatability, and at the same time, an apparatus is reduced in sizes. The film forming apparatus is provided with a film forming chamber (3) for holding a substrate (2) inside, and an injection valve (4) for directly injecting a liquid material into the film forming chamber (3). The liquid material is a mixed solution composed of a metal compound and a low boiling point organic compound. A pressure in the film forming chamber (3) is permitted to be larger than a vapor pressure of the metal compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.
(FR)
L’invention concerne un film d’oxyde métallique ou de nitrure métallique présentant une moindre vacance en oxygène, élaboré à grande vitesse avec une excellente reproductibilité, ainsi qu’un appareil de taille réduite. L’appareil de formation de film comprend une chambre de formation de film (3) destinée à contenir un substrat (2), ainsi qu’une soupape d’injection (4) servant à injecter une substance liquide directement dans la chambre de formation de film (3). La substance liquide est une solution de mélange contenant un composé métallique et un composé organique à faible point d’ébullition. La pression dans la chambre de formation de film (3) peut être plus importante que la vapeur de pression du composé métallique avant d’être mélangé avec le composé organique à faible point d’ébullition et moins importante que la vapeur de pression de la solution de mélange.
(JA)
 酸素欠損の少ない金属酸化膜又は金属窒化膜を、高速で再現性よく成膜することを可能にし、同時に装置の小型化を実現することであり、本発明に係る成膜装置は、基板2を内部に保持する成膜室3と、液体原料を成膜室3内に直接噴射する噴射弁4と、を備え、前記液体原料が、金属化合物と低沸点有機化合物とからなる混合溶液であり、前記成膜室3内の圧力を、前記低沸点有機化合物と混合する前の前記金属化合物の蒸気圧よりも大きくし、かつ前記混合溶液の蒸気圧よりも小さくしている。
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