Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Saturday 31.10.2020 at 7:00 AM CET
Settings

Settings

Goto Application

1. WO2006097917 - METHOD OF ACHIEVING WEAR LEVELING IN FLASH MEMORY USING RELATIVE GRADES

Publication Number WO/2006/097917
Publication Date 21.09.2006
International Application No. PCT/IL2006/000321
International Filing Date 12.03.2006
IPC
G11C 16/06 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
G11C 11/34 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
CPC
G06F 12/0246
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
12Accessing, addressing or allocating within memory systems or architectures
02Addressing or allocation; Relocation
0223User address space allocation, e.g. contiguous or non contiguous base addressing
023Free address space management
0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
0246in block erasable memory, e.g. flash memory
G06F 2212/1036
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
10Providing a specific technical effect
1032Reliability improvement, data loss prevention, degraded operation etc
1036Life time enhancement
G06F 2212/7211
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
2212Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
72Details relating to flash memory management
7211Wear leveling
G11C 16/349
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
349Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
G11C 2216/18
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2216Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
12Reading and writing aspects of erasable programmable read-only memories
18Flash erasure of all the cells in an array, sector or block simultaneously
Applicants
  • SanDisk IL Ltd. [IL]/[IL] (AllExceptUS)
  • LASSER, Menachem [IL]/[IL] (UsOnly)
Inventors
  • LASSER, Menachem
Agents
  • FRIEDMAN, Mark
Priority Data
11/288,16129.11.2005US
60/661,25614.03.2005US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF ACHIEVING WEAR LEVELING IN FLASH MEMORY USING RELATIVE GRADES
(FR) PROCEDE D'EGALISATION DE L'USURE DANS UNE MEMOIRE FLASH AU MOYEN DE QUALITES RELATIVES
Abstract
(EN)
For each block of a memory, a number is calculated that is a function of how many times the block has been erased and of how many times at least one other block has been erased. The numbers are stored in the memory device that includes the memory. The numbers are updated as needed when blocks are erased. Blocks are selected to be erased in accordance with their numbers. Preferably, each block's function is the block's relative grade.
(FR)
Pour chaque bloc de mémoire, on calcule un nombre qui est fonction du nombre d'effacements renvoyant à la qualité relative) dudit bloc et du nombre d'effacements d'au moins un autre bloc. Ces nombres sont stockés dans un dispositif de mémoire comprenant la mémoire. Les nombres sont mis à jour lorsque des blocs sont effacés. On choisit d'effacer les blocs en fonction de leurs nombres. La fonction de chaque bloc correspond de préférence à la qualité relative dudit bloc.
Latest bibliographic data on file with the International Bureau